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Reconfigurable ultra-broadband low noise amplifier with active inductor

A low-noise amplifier and active inductance technology, which is applied to DC-coupled DC amplifiers, differential amplifiers, and improved amplifiers to expand bandwidth. Reduced area, good gain flatness, and area-saving effects

Active Publication Date: 2014-12-24
BEIJING UNIV OF TECH
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AI Technical Summary

Problems solved by technology

With the development of integrated circuit technology, the feature size of the device is continuously reduced, and the process (process) deviation has more and more serious influence on the device characteristics and then on the low noise amplifier. Parasitics, including package parasitics, can also cause LNA performance to deviate from what was originally designed for

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  • Reconfigurable ultra-broadband low noise amplifier with active inductor
  • Reconfigurable ultra-broadband low noise amplifier with active inductor
  • Reconfigurable ultra-broadband low noise amplifier with active inductor

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Embodiment Construction

[0025] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings. However, the examples given are not intended to limit the present invention.

[0026] The invention is designed and verified based on TSMC RF CMOS 0.18μm technology. The whole circuit topology is as figure 1 As shown, it includes a parallel feedback amplifier 1 composed of the first NMOS transistor (M1), the first PMOS transistor (M2) and the first feedback resistor (R1) connected in parallel, and the drain of the second NMOS transistor (M3) and the first The Cascode amplifier 2 formed by the source-level connection of three NMOS transistors (M4) is connected to the gate of the fourth NMOS transistor (M5) and the drain of the fourth NMOS transistor (M5) by the two ends of the differential floating active inductance 3 respectively. The common-source feedback amplif...

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Abstract

The invention provides a reconfigurable ultra-broadband low noise amplifier with an active inductor, which has the characteristics of high gains, adjustable gains, small area, low noises and the like. The low noise amplifier comprises a parallel feedback amplifier, a Cascode amplifier and a common source amplifier fed back based on a fully differential floating active inductor, and an output buffering stage, wherein the parallel feedback amplifier adopts a resistor to replace a traditional spiral inductor to realize broadband input impedance matching and the area of a chip is reduced; by adopting the structure, the transconductance is increased so that the transconductance is changed into gmN+gmP from original gmN or gmP, and the noises of the amplifier are reduced. A middle amplification stage is composed of the Cascode amplifier and the common source amplifier so that the gains of the whole amplifier are increased. The active inductor is the fully differential floating active inductor and the whole amplifier only adopts one active inductor so that the area of the chip is greatly reduced; the size of an inductance value can be changed through adjusting bias voltage, and furthermore, the grains of the low noise amplifier are changed and the grains can be adjusted.

Description

technical field [0001] The invention relates to the field of radio frequency integrated circuit design, in particular to a reconfigurable ultra-wideband low-noise amplifier based on active inductance. Background technique [0002] Inductors are widely used in low noise amplifier designs. On-chip passive inductance (PI) occupies most of the LNA chip area, and the quality factor (Q) and self-resonant frequency are low, and the inductance value and Q value cannot be adjusted. Development requirements for integration, low cost, broadband, and adjustable performance. [0003] In addition, it is well known that the performance of a low noise amplifier depends on the size of the device (element) and the bias state of the circuit. With the development of integrated circuit technology, the feature size of the device is continuously reduced, and the process (process) deviation has more and more serious influence on the device characteristics and then on the low noise amplifier. Par...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/26H03F1/42H03F3/45
Inventor 张万荣邓蔷薇金冬月谢红云赵飞义
Owner BEIJING UNIV OF TECH
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