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Groove type IGBT and manufacturing method

A groove type and groove technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as limiting the working performance of IGBT devices, improve conductance modulation effect, reduce thickness, and reduce conduction voltage drop Effect

Active Publication Date: 2014-12-24
CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The above factors limit the performance of IGBT devices

Method used

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  • Groove type IGBT and manufacturing method
  • Groove type IGBT and manufacturing method
  • Groove type IGBT and manufacturing method

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Embodiment Construction

[0033] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0034] In order to thoroughly understand the present invention, detailed steps and detailed structures will be provided in the following description, so as to illustrate the technical solution of the present invention. Preferred embodiments of the present invention are described in detail below, however, the present invention may have other embodiments besides these detailed descriptions.

[0035] The invention provides a preparation process of a trench type IGBT, by increasing the relatively heavily doped P-type region and N-type region in the middle region of...

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Abstract

The invention discloses a groove type IGBT and a manufacturing method. A P type region with heavy doping and an N type region with heavy doping are added in the middle region of a silicon substrate, so that electrons are induced to flow in an N junction region to be concentrated, penetrate through the P type region and finally reach a collector through the P type region. Based on the electric neutrality principle, the concentration of the electrons on the periphery of the N type region is increased due to the concentration of the electrons, the concentration of holes in the periphery of the N type region is increased, so that the conductance modulation effect of the N type region is increased due to the concentration of the electrons, and the holes are diffused to an emitter through the P type region. According to the groove type IGBI manufacturing method, the charge balance principle is utilized, the electric field intensity in the region is increased so that larger voltage can be obtained under the same drift region thickness, the thickness is reduced, the conductance modulation effect is improved, and the conduction voltage drop of a device is effectively reduced.

Description

technical field [0001] The invention relates to the field of power transistors, in particular to a trench type IGBT and a preparation method. Background technique [0002] IGBT (InsulatedGateBipolarTransistor), insulated gate bipolar transistor, is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor), and has high input of MOSFET Impedance and GTR (gianttransistor, high-power transistor) low conduction voltage drop two advantages. The saturation voltage of GTR is low, the carrying current density is large, but the driving current is large; the driving power of MOSFET is small, the switching speed is fast, but the conduction voltage drop is large, and the current carrying density is small. The IGBT combines the advantages of the above two devices, with low driving power and low saturation voltage. It is very suitable for the conversion system with a DC voltage of 600V and...

Claims

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Application Information

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IPC IPC(8): H01L21/331H01L21/265H01L29/739H01L29/06
CPCH01L21/26513H01L29/0623H01L29/66348H01L29/7397
Inventor 吴多武可瑞思
Owner CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD
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