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Germanium material surface stabilizing and passivating method

A stable and passivation technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of reducing and unfavorable Ge material application, and achieve the effect of convenient use, obvious passivation effect and simple operation.

Inactive Publication Date: 2014-12-24
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Furthermore, long carbon chains (—(CH 2 ) n -) The duration of protection is generally no more than 48h (CN102005390B), and the stability time will be greatly reduced under water phase (high humidity) conditions, which are not conducive to the subsequent application of Ge materials

Method used

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  • Germanium material surface stabilizing and passivating method
  • Germanium material surface stabilizing and passivating method
  • Germanium material surface stabilizing and passivating method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] The thiol used for passivation in this embodiment is n-dodecanethiol (molecular formula CH 3 (CH 2 ) 10 CH 2 SH, the English abbreviation is NDM), and the crystal orientation of the Ge sheet to be passivated is (111).

[0031] Such as figure 1 shown, including the following steps:

[0032] Step 1: Cut the Ge sheet with the crystal orientation of (111) into small pieces of 5 mm×5 mm, and then soak the Ge sheet in acetone and ethanol solutions for 15 minutes and ultrasonically clean the Ge sheet to remove organic pollutants on the surface of the Ge sheet. After ultrasonic cleaning, each sample piece was blown dry with nitrogen gas for later use.

[0033] Step 2: soak the Ge sheet after the surface cleaning treatment in step 1 into deionized water for 30min, and initially remove the water-soluble oxide (such as GeO2) on the surface of the Ge sheet. 2 ). Then soak the Ge sheet in a hydrochloric acid solution with a mass percentage of 10% for 30 minutes to further re...

Embodiment 2

[0042] The thiol used for passivation in this embodiment is n-hexadecanthyl mercaptan (molecular formula CH 3 (CH 2 ) 15 SH), and the crystal orientation of the Ge sheet to be passivated is (111).

[0043] Such as figure 1 shown, including the following steps:

[0044] Step 1: Removing organic pollutants on the surface of the Ge sheet, the specific process is consistent with Step 1 in Example 1.

[0045] Step 2: removing the oxide layer on the surface of the Ge sheet and realizing surface chlorination, the specific process is consistent with step 2 in Example 1.

[0046] Step 3: Prepare 10 mL of n-hexadecanethiol solution with a concentration of 2 ammol / L in absolute ethanol, mix well and add 10 mL of deionized water to the solution. To ensure that the reagents are well mixed, mix the reagents thoroughly with a shaker until the white suspension in the mixed reagents disappears. The finally obtained reaction reagent is ammol / L n-hexadecanthiol solution (prepared with eth...

Embodiment 3

[0050] The mercaptan that is used for passivation in this embodiment is n-octadecyl mercaptan (molecular formula CH 3 (CH 2 ) 17 SH), and the crystal orientation of the Ge sheet to be passivated is (111).

[0051] Such as figure 1 shown, including the following steps:

[0052] Step 1: Removing organic pollutants on the surface of the Ge sheet, the specific process is consistent with Step 1 in Example 1.

[0053] Step 2: removing the oxide layer on the surface of the Ge sheet and realizing surface chlorination, the specific process is consistent with step 2 in Example 1.

[0054] Step 3: Prepare 10 mL of n-octadecylmercaptan solution with a concentration of 2 ammol / L with absolute ethanol, mix well and add 10 mL of deionized water to the solution. To ensure that the reagents are well mixed, mix the reagents thoroughly with a shaker until the white suspension in the mixed reagents disappears. The finally obtained reaction reagent is an ammol / L n-octadecylmercaptan solutio...

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Abstract

The invention relates to a germanium material surface stabilizing and passivating method. The method includes the steps that the surface of a germanium wafer is cleaned with different reagents, dirt and a surface oxidation layer on the surface of the germanium wafer are effectively removed, and the surface of the germanium wafer is preliminarily chlorinated; a mercaptan reagent is prepared through mixed liquid of ethyl alcohol and water and a self-assembled film is formed on the surface of the germanium wafer under the proper heating passivating condition. The method has the advantages that operation is simple, use is convenient, cost is low, and the passivating effect is obvious.

Description

technical field [0001] The invention belongs to the field of surface treatment of germanium materials, in particular to a method for stable passivation of the surface of germanium materials. Background technique [0002] At present, electronic devices based on semiconductor materials have been rapidly developed in biosensing applications due to their high sensitivity and excellent selectivity. As a typical semiconductor material, silicon-based biosensors have been extensively studied. As a semiconductor material of the same family as silicon, germanium (Ge), compared with Si, the electron and hole mobility of Ge are 3 times and 4 times that of Si, respectively, and the band gap of Ge is much smaller than that of Si. Therefore, Ge as a channel material can realize high-mobility electronic devices, and is expected to be widely used in the field of high-performance biochemical sensors. However, as a semiconductor material discovered before Si, Ge does not form a stable surfac...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/306
CPCH01L21/02052H01L21/02227H01L21/02236
Inventor 许宝建蔡奇金庆辉赵建龙叶林狄增峰
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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