High-power IGBT (insulated gate bipolar transistor) driver

A driver, high-power technology, applied in the field of driver, can solve the problems of transformer manufacturing process and structure difficulties, and achieve the effects of being beneficial to protection, light weight, and easy to design and manufacture

Inactive Publication Date: 2014-12-10
CHINA ELECTRONICS TECH GRP CORP NO 14 RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the isolation voltage is high, all three methods bring many difficulties to the manufacturing process and structure of the transformer.

Method used

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  • High-power IGBT (insulated gate bipolar transistor) driver
  • High-power IGBT (insulated gate bipolar transistor) driver

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Embodiment Construction

[0021] The present invention will be further described in detail below in conjunction with the drawings.

[0022] Such as Figure 1 to 2 As shown, the present invention provides a high-power IGBT driver, including a pulse power circuit, n transformers T1 to Tn, where n≥2, and a clamping and current limiting circuit; the clamping and current limiting circuit Including voltage regulator tube V1 and voltage regulator tube V2, and resistor R1 and resistor R2;

[0023] One cable passes through the center of all n transformers and serves as the primary winding of all n transformers;

[0024] Each transformer has a separate secondary winding, the winding direction of all secondary windings is the same, the number of turns is the same, and the secondary windings of all n transformers are all connected in parallel; one end of the secondary winding of each transformer is connected to The 1 ends of the other n-1 transformer secondary windings are connected together, and the 2 ends of each tra...

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PUM

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Abstract

The invention relates to a high-power IGBT (insulated gate bipolar transistor) driver. A wire passes the centers of all of n transformers and serves as a primary winding for the n transformers. Each transformer comprises a secondary winding independent. Winding directions of the secondary windings are identical; the secondary windings are equal in the number of turns. The secondary windings are all connected in parallel. The secondary windings of the transformers are parallelly connected for outputting; great instantaneous output current can be provided; load carrying capacity is high; a distribution parameter is diminished; wide and narrow pushes are both considered; an IGBT can be on or off at higher speed; on and off loss of the IGBT is reduced. A drive circuit and a main circuit are isolated through the transformers; reliability of the drive circuit is greatly enhanced; damage of the drive circuit caused by failure of the main circuit is effectively prevented. Devices in secondary winding loops are all passive devices, no auxiliary power is required, the circuits are simple, fewer devices are used, circuit complexity is reduced, and parasitic interference is avoided.

Description

Technical field [0001] The invention relates to a driver, in particular to a high-power IGBT driver. Background technique [0002] Insulated gate bipolar transistors (IGBT) have good characteristics such as high withstand voltage, large current, high speed and low saturation voltage drop. They are widely used in high-power equipment and play a central role in modern power electronics technology. There are also differences in the level of IGBT voltage, the size of the current capacity, and the technical requirements of the driver. High-power IGBTs are generally used in high-power applications, and the operating environment is more complicated, so high-power IGBTs have higher requirements for the drive circuit. The feedback from engineering applications shows that the failure rate of large-capacity IGBT devices is much higher than that of low-current IGBT devices. [0003] Under normal circumstances, high-power IGBT drivers should provide sufficient gate drive current to reduce the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/567
Inventor 杨景红戴广明田为杨明
Owner CHINA ELECTRONICS TECH GRP CORP NO 14 RES INST
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