Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for Enlarging the Process Window of Wet Removal of Unreacted Nickel-Platinum Silicide

A technology of wet removal and process window, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of increasing wet removal and small process window, and achieve the effect of increasing the process window

Active Publication Date: 2017-10-27
SHANGHAI HUALI MICROELECTRONICS CORP
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The present invention is aimed at the prior art, the traditional wet removal of metal silicide is greatly affected by the content of the added precious metal platinum, in order to ensure the safety of the process, it is necessary to increase the SPM process time to completely remove the unreacted deposited metal, Defects that lead to its process window being too small provide a method to increase the process window of wet removal of unreacted nickel-platinum silicide

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for Enlarging the Process Window of Wet Removal of Unreacted Nickel-Platinum Silicide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] In order to illustrate the technical content, structural features, achieved goals and effects of the present invention in detail, the following will be described in detail in conjunction with the embodiments and accompanying drawings.

[0016] see figure 1 , figure 1 Shown is a flow chart of the method of the present invention for enlarging the process window of wet removal of unreacted nickel-platinum silicide. The method for increasing the process window of wet removal of unreacted nickel-platinum silicide includes:

[0017] Perform step S1: SC-1(NH 4 OH, H 2 o 2 mixed solution), or normal temperature hydrochloric acid (HCL), remove a certain amount of nickel-platinum alloy for the first time;

[0018] Execution of step S2: SPM at 130-200°C (H 2 SO 4 、H 2 o 2 In the mixed solution), remove the remaining nickel-platinum alloy;

[0019] Execute step S3: at SC-1(NH 4 OH, H 2 o 2 mixed solution) for cleaning.

[0020] In order to more intuitively disclose th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Provided is a technical window method for removing unreacted nickel-platinum silicide in an increased wet method. The method comprises the steps that S1) certain amount of nickel and platinum alloy is removed from an NH4OH and H2O2 mixed solution SC-1 at 70 DEG C or hydrochloric acid (HCL) at normal temperature for the first time; S2) residual nickel and platinum alloy is completely removed from an NH4OH and H2O2 mixed solution SPM at 130 to 200 DEG C; and S3) cleaning is carried out in the NH4OH and H2O2 mixed solution SC-1. According to the method, certain amount of nickel and platinum alloy is removed from the NH4OH and H2O2 mixed solution SC-1 at 70 DEG C or hydrochloric acid (HCL) at normal temperature for the first time; the residual nickel and platinum alloy is completely removed from the NH4OH and H2O2 mixed solution SPM at 130 to 200 DEG C due to the fact that proper excessive etching is carried out due to the excellent selectivity ratio of SPM to the nickel-platinum alloy; and thus, a technical window can be etched in the increased wet method.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for enlarging the process window of wet removal of unreacted nickel-platinum silicide. Background technique [0002] In the field of semiconductor manufacturing process technology, nickel silicide has become the first choice for processes below 65nm due to its low sheet resistance and low silicon consumption rate. However, due to the poor thermal stability of the nickel silicide, when the temperature is greater than 700 ° C, it will transform from low-resistance NiSi to high-resistance NiSi 2 Si phase. In order to enhance the thermal stability of the nickel silicide, in this field, the noble metal platinum is usually added to the nickel silicide to form a nickel-platinum alloy. [0003] The existing metal silicide preparation process adopts self-alignment technology, and the steps include: first, exposing the area where metal silicide needs to be formed; second,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3213
CPCH01L21/32134
Inventor 宋振伟徐友峰陈晋
Owner SHANGHAI HUALI MICROELECTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com