Copolymer for lithography and method for manufacturing same, resist composition, and method for manufacturing substrate

Abstract

Provided is a copolymer for lithography, comprising monomer units that include oxygen leaving groups and monomer units that do not include oxygen leaving groups. Among five fractions in which an eluent showing peaks for copolymers in an elution curve obtained through gel permeation chromatography (GPC) is divided in order of elution so as to have equal volumes, when the proportions of monomer units that include oxygen leaving groups in the copolymers included in the first through fourth fractions, where the first is the earliest to elute, are N(v1)-N(v4) mol% and the proportions of monomer units that include oxygen leaving groups in the copolymers included in the total of the five fractions is Nave mol%, N(v1) / Nave is 1.01-1.09, and N(v2) / Nave, N(v3) / Nave, and N(v4) / Nave are each 0.95-1.05.

Description

technical field [0001] The present invention relates to a copolymer for lithography, a method for producing the copolymer for lithography, a resist composition using the copolymer for lithography, and a method for producing a patterned substrate using the resist composition. [0002] This application claims priority based on Japanese Patent Application No. 2012-048249 filed in Japan on March 5, 2012, and the content thereof is incorporated herein. Background technique [0003] In the manufacturing process of semiconductor elements, liquid crystal elements, and the like, the refinement of patterns formed by photolithography has rapidly progressed in recent years. As a method of refinement, there is shortening of the wavelength of irradiation light. [0004] Recently, KrF excimer laser (wavelength: 248nm) lithography technology has been introduced, and ArF excimer laser (wavelength: 193nm) lithography technology and EUV (wavelength: 13.5nm) lithography technology are being st...

AI Technical Summary

Problems solved by technology

[0010] If the composition of the monomer units in the copolymer is different, the solubility in the solvent is likely to be uneven. When preparing a resist composition, it takes a long time to dissolve it in the solvent, or it needs to be increased due to the generation of insoluble components. The number of manufacturing steps, etc., brings difficulties to the preparation of resist compositions

In addition, the sensitivity of the obtained resist composition tends to become insufficient

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