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Upper part electrode and manufacturing method of upper part electrode, and dry etching equipment

A technology of electrode and electrode body, which is applied in the direction of electrode system manufacturing, cold cathode manufacturing, discharge tube/lamp manufacturing, etc. It can solve the problems of short service life and poor workmanship of the upper electrode, achieve long service life, avoid poor workmanship, The effect of high temperature Mohs hardness

Inactive Publication Date: 2014-11-19
BOE TECH GRP CO LTD +1
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0004] In order to solve the above problems, the present invention provides an upper electrode and its manufacturing method and dry etching equipment, which are used to solve the problems of short service life of the upper electrode and prone to poor process in the prior art

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  • Upper part electrode and manufacturing method of upper part electrode, and dry etching equipment
  • Upper part electrode and manufacturing method of upper part electrode, and dry etching equipment
  • Upper part electrode and manufacturing method of upper part electrode, and dry etching equipment

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Embodiment Construction

[0030] In order for those skilled in the art to better understand the technical solution of the present invention, the upper electrode, its manufacturing method and dry etching equipment provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0031] figure 2 It is a schematic structural diagram of an upper electrode provided in Embodiment 1 of the present invention. Such as figure 2 As shown, the upper electrode 100 includes an upper electrode body 120 on which an electrode gas outflow hole 160 is disposed. The surface of the upper electrode body 120 is covered with an ionic crystal layer 140. Preferably, the ionic crystal layer 140 is gamma-type aluminum oxide (γ-Al 2 o 3 )layer. The surface of the ionic crystal layer 140 is covered with an atomic crystal layer 180 . Preferably, the atomic crystal layer 180 is alpha alumina (α-Al 2 o 3 )layer.

[0032] It should be noted that: the electrode gas outflow hole ...

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Abstract

The invention provides an upper part electrode and a manufacturing method of the upper part electrode, and dry etching equipment. The upper part electrode comprises an upper part electrode main body, wherein electrode gas discharge holes are formed in the upper part electrode main body; the surface of the upper part electrode main body is coated with an ionic crystal layer; the surface of the ionic crystal layer is coated with an atom crystal layer. The method comprises the steps of forming the electrode gas discharge holes in the upper part electrode main body, forming the ionic crystal layer on the surface of the upper part electrode main body and forming the atom crystal layer on the surface of the ionic crystal layer. According to the upper part electrode provided by the invention, the surface oxidation film is made of atom crystals, and the atom crystals are stable in chemical property, high temperature resistant and large in Mohs hardness, so that the upper part electrode can effectively avoid adhesion of reaction product and corrosion of the electrode gas discharge holes, and then the service life of the upper part electrode is prolonged, and meanwhile the condition of poor process can be avoided.

Description

technical field [0001] The invention relates to the technical field of semiconductor processing, in particular to an upper electrode, a manufacturing method thereof, and dry etching equipment. Background technique [0002] Dry etching is a technology that uses plasma to etch thin films. The upper electrode is the main part of dry etching equipment. In the prior art, the main body of the upper electrode is made of metal material, generally magnesium-aluminum alloy. figure 1 It is a schematic structural diagram of the upper electrode in the prior art. Such as figure 1 As shown, the upper electrode 100 includes an upper electrode body 120 and an ionic crystal layer 140 . Electrode gas outflow holes 160 are distributed on the upper electrode body 120, and an ionic crystal layer 140 is formed on the surface of the upper electrode body 120 through an anodic oxidation process, which is generally gamma-type aluminum oxide (γ-Al 2 o 3 )layer. After the anodic oxidation process...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/41H01L21/28
CPCH01J37/32541H01J9/02H01J37/3255
Inventor 赵吾阳刘学光倪水滨
Owner BOE TECH GRP CO LTD
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