Semiconductor detection circuit and method

Abstract

The invention provides a semiconductor detection circuit and method. The semiconductor detection circuit comprises at least two parallel units to be detected, a first detection end, a second detection end, at least two third detection ends corresponding to the units to be detected one to one and at least one diode. The units to be detected are used for detecting breakdown characteristics between two electrodes, and the structures of the different units to be detected are different. The second ends of every two adjacent units to be detected are connected with the second detection end, the first ends of every two adjacent units to be detected are connected through the diodes, the first end of one unit to be detected is connected with the first detection end, the anodes of all the diodes face the first detection end, and therefore all the diodes are switched on when the first detection end applies forward breakdown detection voltages. By the adoption of the semiconductor detection circuit, the unit to be detected with the worst voltage withstanding characteristic can be quickly detected, and different influences of the structures of the different units to be detected on the breakdown characteristics can be acquired.

Description

technical field [0001] The invention relates to semiconductor detection technology, in particular to a semiconductor detection circuit and a detection method. Background technique [0002] In the existing semiconductor technology, a multilayer metal interconnection structure is usually used to electrically connect various devices, and the metal interconnections are electrically isolated by dielectric materials with good insulating properties. The reliability of the multilayer metal interconnection structure is crucial to the yield, product performance and reliability of the entire IC manufacturing process. Therefore, the breakdown and The reliability test of the time-dependent dielectric breakdown (Time dependent Dielectric Breakdown, TDDB) characteristic has become an extremely important test item in the reliability test. In the reliability test, by applying a voltage to the adjacent metal interconnection lines, electric leakage occurs between the adjacent metal interconne...

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Problems solved by technology

[0003] In order to obtain a metal interconnect structure with better breakdown characteristics, it is usually necessary to detect multiple groups of metal interconnect structures with different metal interconnect line spacing, shape or different dielectric materials. If the existing detection method is used, only one group The corresponding breakdown voltage or breakdown time is detected in groups to obtain the influence of different metal interconnection spacing, shape or different dielectric materials on the breakdown characteristics of the metal interconnection structure. The detection time is longer and the detection cost is higher.

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