Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Fault-tolerant method aiming at TSV fault grading in 3D NoC

A fault classification and fault technology, applied in the direction of response errors, etc., can solve the problems of reducing system performance degradation, TSV faults, large area and power consumption overhead, so as to reduce delay and power consumption overhead, ensure reliability, The effect of reducing network congestion

Active Publication Date: 2014-11-05
黄山市开发投资集团有限公司
View PDF2 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] 1. Non-full interconnection caused by TSV failure
In the packaging process of 3D IC, due to the possibility of voids or air bubbles during the manufacture of TSVs, TSVs and pads do not coincide during bonding, and short circuits between TSVs or open circuits between TSVs and pads during soldering will cause TSV failures
At the same time, TSV is also prone to failure during use
[0004] 2. In some specific applications, the size of each module is different (the area of ​​an IP core in the upper layer is equivalent to the total area of ​​several IP cores in the lower layer, and the IP core in the upper layer is only connected to one IP core in the lower layer through TSV), resulting in 3D NoC is not fully interconnected
[0006] 1. Using redundant TSVs, in order to achieve a certain fault tolerance, it is necessary to add enough redundant TSVs, which brings a large area and power consumption overhead, and can only accommodate a limited number of TSV failures
[0007] 2. Reinforce the TSV. When the TSV link fails, use the remaining available TSV in the link to transmit data serially, reducing the system performance degradation caused by TSV failure, but without adding redundant TSV Fault tolerance is not high
[0008] 3. Use fault-tolerant routing algorithm to bypass faulty nodes, but this method will increase delay and power consumption and decrease system performance, and will cause waste of non-faulty resources in some systems

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Fault-tolerant method aiming at TSV fault grading in 3D NoC
  • Fault-tolerant method aiming at TSV fault grading in 3D NoC
  • Fault-tolerant method aiming at TSV fault grading in 3D NoC

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] A fault-tolerant method for TSV fault classification in 3D NoC, the operation steps are as follows:

[0028] a. Carry out fault test to TSV link, obtain the fault status of each TSV bit line in the TSV link;

[0029] b. Determine the fault state of each group of TSVs in the TSV link, if there is no TSV fault, mark the fault state of the group as (00) 2 , if the number of faulty TSVs in the group ≤ 1 / 2 the number of TSVs in the group, mark the fault status of the group as (01) 2 , otherwise mark its failure state as (10) 2 ; for (00) 2 The data corresponding to the group is transferred once; for (01) 2 The data corresponding to the group is transmitted twice; (10) 2 The data corresponding to the group is passed by not(10) 2 When the sum of the four TSV status values ​​is greater than 6, the TSV link is unavailable;

[0030] c. When the TSV link is faulty and still available, the data is transmitted serially through TSV;

[0031] d. For unavailable TSV links, the d...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a fault-tolerant method aiming at TSV (Through Silicon Via) fault grading in 3D NoC (Network on Chip). According to the method, TSVs and data bits are respectively divided into four groups; if a TSV fault state value is within 6, the serial transmission among the groups and among data bits in the groups can be realized by using rest available TSVs; and otherwise, a localized fault-tolerant routing algorithm is used, and the address of the optimum TSV is found out from a locally stored TSV state table and is used as a temporary target address to be added to a data packet header for completing interlayer communication. According to the scheme of the method provided by the invention, the corresponding fault-tolerant method is selected through judging the fault grade of TSV links; higher reliability of the system is ensured; and meanwhile, the waste of available resources is reduced.

Description

technical field [0001] The invention relates to the technical field of application of integrated circuit chips, in particular to a fault tolerance method for TSV fault classification in 3D NoC. Background technique [0002] 3D IC technology is to stack multiple layers of silicon chips together through short and dense Through Silicon Via (TSV), which shortens the link length and increases link bandwidth, thereby improving network performance and reducing communication delay. It has been widely used in the semiconductor industry. Get considerable income. Although the use of 3D Network on Chip (NoC) architectures in integrated systems has many advantages over traditional 2D NoCs, there are several factors that can cause 3D architectures to become non-fully interconnected. The reason can be divided into two aspects: [0003] 1. Non-full interconnection caused by TSV failure. During the packaging process of 3D IC, due to the possibility of voids or air bubbles during the m...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F11/07
Inventor 欧阳一鸣韩倩倩梁华国黄正峰陈义军张一栋常郝
Owner 黄山市开发投资集团有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products