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Etching paste component and application thereof

A composition and etching paste technology, which is applied in the direction of surface etching composition, electrical components, semiconductor/solid-state device manufacturing, etc., can solve the problems of high corrosiveness, chemical raw material toxicity, time-consuming wet etching method, etc. The effect of good stability of net and viscosity over time

Inactive Publication Date: 2014-10-29
CHI MEI CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the wet etching method is time-consuming and complicated, and the chemical materials used are more toxic and highly corrosive

Method used

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  • Etching paste component and application thereof
  • Etching paste component and application thereof
  • Etching paste component and application thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0070] The preparation method of the etching paste composition is to mix the fluorine-containing compound (A), the solvent (B), the particles (C), the organic thickener (D) and the acid (E), and stir for a sufficient time to form a thixotropic Viscous paste in nature. Stirring can be performed at 15 to 35°C or with warming to a suitable temperature.

[0071] The etching method of the present invention comprises:

[0072] Provide a touch panel, including a substrate, and a silicon oxide layer or a silicon nitride layer disposed on the substrate;

[0073] screen printing the etching paste composition as described above on the silicon oxide layer or silicon nitride layer;

[0074] performing an etching step; and

[0075] Proceed to the washing step.

[0076] The material of the substrate is not particularly limited, and general materials are applicable.

[0077] The so-called silicon oxide layer, except pure SiO of glass or quartz 2 Also, all SiO-based 2 system, consisting...

Embodiment 1

[0086] In a 1-liter polypropylene cup, at 15 to 35°C, add 100 parts by weight of ammonium bifluoride (A-1), and 100 parts by weight of (4-isopropylphenyl)methanol (B-1-3) , 100 parts by weight of water (B-2), ethylene glycol (B-3-1) of 300 parts by weight and formic acid (E-1-1) of 30 parts by weight were uniformly stirred for 5 minutes, while stirring Add 300 parts by weight of polytetrafluoroethylene (C-1-1), and stir for 5 minutes, and finally add 10 parts by weight of cellulose (D-1), and stir for 60 minutes at a rotating speed of 500rmp to obtain Example 1 composition of etching paste.

Embodiment 2 to 9 and comparative example 1 to 6

[0088] Embodiment 2 to 9 and comparative example 1 to 6 are to prepare this etching paste composition with the same step as embodiment 1, and difference is: change the kind of chemical and its usage amount, the kind of this chemical and its amount. The amount used is shown in Table 1 and Table 2.

[0089]

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Abstract

The invention relates to an etching paste component and an application thereof; the etching paste component comprises the following elements: a fluorinated compound (A); a solvent (B) comprising am linalool solvent (B-1), water (B-20 and other solvent (B-3); a micro particle (C) selected from a group formed by or combined by a polymer particle (C-1) and inorganic compound particle (C-2); an organic thickener (D); and acid (E) selected from a group formed by or combined by organic acid (E-1) and inorganic acid (E-2). The invention also provides an etching method: arranging the etching paste compound on a monox layer or a silicon nitride layer of a substrate of a touch panel through silk-screen printing; carrying out etching step and cleaning step; the etching paste compound is excellent in durable stability, and suitable for silk-screen printing operation.

Description

technical field [0001] The invention relates to an etching paste composition, in particular to an etching paste composition suitable for screen printing. Background technique [0002] In the structure of touch panels, thin film transistors or solar cells, chemical vapor deposition (Chemical Vapor Deposition, CVD) or wet chemical coating is often used to form silicon oxide or silicon nitride layers. Use of reflective or passivating layers. [0003] The step of removing a specific part of the silicon oxide or silicon nitride layer is called etching. The existing technology includes the use of laser-supported etching method (laser-supported etching method), or wet etching method ( Wet-chemical method) or dry-etching method (dry-etching method) selectively etches. [0004] As far as the laser-supported etching method is concerned, although it has high precision, its working method of scanning the etching pattern point by point and line by line requires a lot of working time, w...

Claims

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Application Information

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IPC IPC(8): C09K13/08C09K13/00H01L21/306
Inventor 刘骐铭施俊安
Owner CHI MEI CORP
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