Semiconductor device and manufacturing method thereof

Abstract

The invention discloses a semiconductor device manufacturing method which comprises the following steps: forming a plurality of fins extending along a first direction and trenches on a substrate; forming a shallow trench isolation in the trenches, wherein the shallow trench isolation at least includes one doped isolating layer; and carrying out annealing to enable impurities in the doped isolating layers to be diffused into an adjacent substrate channel to form a punch-through barrier layer. According to the semiconductor device and the manufacturing method thereof of the invention, a plurality of stacks of doped layers and isolating layers are formed in the trenches on the sides of the fins and the uniform and steep punch-through barrier layer is formed through annealing and diffusion, which effectively restrains the parasitic channel effect and the channel punch-through effect, simplifies the process, and improves the reliability of the device.

Description

technical field [0001] The invention relates to a semiconductor device and a manufacturing method thereof, in particular to a three-dimensional multi-gate FinFET capable of effectively suppressing parasitic channel effects and a manufacturing method thereof. Background technique [0002] In the current sub-20nm technology, the three-dimensional multi-gate device (FinFET or Tri-gate) is the main device structure, which enhances the gate control ability and suppresses leakage and short channel effects. [0003] For example, compared with traditional single-gate bulk Si or SOI MOSFETs, MOSFETs with double-gate SOI structures can suppress short-channel effects (SCE) and drain-induced barrier lowering (DIBL) effects, have lower junction capacitance, and can To achieve light channel doping, the threshold voltage can be adjusted by setting the work function of the metal gate, which can obtain about 2 times the driving current and reduce the requirements for the effective gate oxide...

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Problems solved by technology

However, this process requires additional implantation steps and it is difficult to effectively control the position and thickness of the barrier layer, as well as properties such as the doping concentration of the doped barrier layer, making it difficult to effectively control the effect of the barrier layer

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