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Preparation method of sapphire substrate polishing solution

A sapphire substrate and polishing liquid technology, which is applied to the polishing composition containing abrasives, etc., can solve the problems of low reuse rate, easy to scratch the polishing sheet, and many impurities in the polishing liquid, so as to achieve good flatness and ensure production The effect of environmental safety and fast polishing rate

Active Publication Date: 2014-10-22
HEBEI YUTIAN HAOYUAN NANO MATERIAL
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention proposes a method for preparing a sapphire substrate polishing liquid, which solves the problems in the prior art that the polishing liquid has many impurities, is easy to scratch the polishing sheet, and has a low reuse rate

Method used

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Embodiment

[0032] A method for preparing a sapphire substrate polishing solution, the whole process is carried out in a class 10,000 clean room, and the specific steps are as follows:

[0033] (1) The airtight reaction tank is made of non-polluting acrylic material, and the airtight reaction tank is cleaned six times with ultra-pure water under vacuum negative pressure tumbling state before use.

[0034] (2) Use a 100-nanometer ceramic membrane filtration system to remove metal ions and other impurities in silica sol raw materials;

[0035] The above-mentioned silica sol is a silica sol with an average particle diameter of 85nm, a spherical colloidal particle shape, a dispersion degree of less than 0.001, and a Mohs hardness of 6.

[0036] (3) adding the above-mentioned filtered silica sol with a concentration of 49% in a closed reaction tank under vacuum negative pressure;

[0037] (4) under vacuum negative pressure state, guanidine carbonate accounting for 0.65% of the total weight of...

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Abstract

The invention provides a preparation method of a sapphire substrate polishing solution, which comprises the following steps: employing a membrane filtration device to remove metal ions and other impurities in a silica sol raw material; passing the filtered silica sol with concentration of 48-50% under a vacuum negative pressure state through a 100 nano-level folding filter core and then adding in an enclosed reaction pot; adding a stabilizing agent under the vacuum negative pressure state in the enclosed reaction pot; adding a synergist with pH value of 8.0-8.5 under the vacuum negative pressure state in the enclosed reaction pot; fully stirring the liquid in the enclosed reaction pot under a negative pressure tumbling state for 60 minutes, and uniformly mixing and then loading. The preparation method has the following beneficial effects that the alkalescence sapphire substrate polishing solution has no corrosion effect to the polishing device, after the usage of the polishing solution is finished, and then the polishing solution is processed, the processed polishing solution can be used as a building paint additive, so that the problems of easy coagulation and difficult recovery of a traditional acidic polishing solution can be solved.

Description

technical field [0001] The invention relates to the technical field of polishing liquid preparation, in particular to a preparation method of a sapphire substrate polishing liquid. Background technique [0002] The polishing liquid is a water-soluble polishing agent without any sulfur, phosphorus, and chlorine additives. The polishing liquid has good oil removal, rust prevention, cleaning and gloss enhancement properties, and can make metal products beyond the original luster. Sapphire substrate polishing liquid is a high-purity low-metal ion polishing product produced by a special process using high-purity silicon powder as a raw material. It is mainly used for polishing sapphire substrates, and can also be widely used for various materials. Nanoscale high planarization polishing. [0003] For the production of LED chips, the selection of substrate materials is the primary consideration. The epitaxial layers of third-generation semiconductor GaN-based materials and device...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
Inventor 杜志伟
Owner HEBEI YUTIAN HAOYUAN NANO MATERIAL
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