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Terahertz detector based on optical antenna

A terahertz detector and optical antenna technology, applied in the field of terahertz signal detection, can solve the problems of limited detector voltage response, unfavorable detector array integration, and limited radio antenna gain, so as to reduce design difficulty and facilitate integration , the effect of detector area reduction

Active Publication Date: 2014-10-08
NANJING UNIV
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Problems solved by technology

[0004] However, the above-mentioned detectors still use the traditional radio wave antenna made of metal, and the size of the antenna is at least 1 / 2 wavelength, which is relatively large, which is not conducive to the integration of the detector array.
At the same time, the gain of the radio wave antenna is limited, and the voltage response of the detector made of the radio wave antenna is limited

Method used

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Embodiment Construction

[0020] In order to make the content of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0021] image 3 Shown is a schematic plan view of the structure of the terahertz detector based on the optical antenna of the present invention. Polysilicon is used as the antenna material, and the antennas 304 and 305 are respectively placed at the two ends of the source terminal 301 and the drain terminal 302 of the transistor. The two ends 304 and 305 of the antenna are formed by a polysilicon layer, and the two ends of the antenna are respectively placed at the two ends of the source 301 and the drain 302 of the transistor, and the transistor gate 303 is located in the middle of the antenna gap, and the transistor gate 303 is also a polysilicon layer, and the gate length is The size is 50-300nm. The transistor gate 303 is subjected to a silicon metallization (sil...

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Abstract

A terahertz detector based on an optical antenna comprises optical antennas made of polycrystalline silicon material layers and a transistor or a field-effect tube. The optical antennas are respectively arranged at the source electrode end and the drain electrode end of the transistor, the distance of the edges of the antennas and the edge of the grid electrode of the transistor is 100-500 nm, and the optical antennas and the source end, the drain end and the grid end of the transistor are isolated by filling oxides in a standard technology. The optical antennas and the grid electrode of the transistor are made of the same layer of polycrystalline silicon materials, however, doping is independently achieved through other technologies, and the thickness is 100-300 nm. The optical antennas are of a dipole antennal structure and a bow-tie antenna structure, and the doping density of the polycrystalline silicon materials is 1017-1020. According to the working scheme of the terahertz detector of the optical antenna, DC bias voltages are added on the grid electrode of the transistor, the source electrode is connected to the ground, the drain electrode floats in the air, and signal voltages are output from the drain electrode.

Description

technical field [0001] The invention relates to the field of terahertz signal detection, and further relates to a detector structure using an optical antenna as a signal receiving component, which can achieve greater response. Background technique [0002] Terahertz is an electromagnetic wave with a frequency between infrared and microwave, which has many unique properties. Due to the high frequency of terahertz, its spatial resolution and temporal resolution are very high. At the same time, many non-metallic polar materials have little absorption of terahertz rays, so they can detect the internal information of the material. In addition, the terahertz electromagnetic energy is small and will not damage the material, and the resonance frequency of the vibration and rotation frequency of biomolecules is in the Terahertz band, so terahertz also has good application prospects in agriculture and food processing industries. At present, terahertz has had a profound impact on bro...

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Application Information

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IPC IPC(8): H01L31/02H01L31/112
CPCH01L31/02024H01L31/0288H01L31/119H01L31/02
Inventor 闫锋吴福伟纪小丽
Owner NANJING UNIV
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