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A kind of preparation method of power diode

A technology of power diodes and silicon dioxide, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of high cost, time-consuming, low efficiency, etc., to improve the withstand voltage level and reduce the forward turn-on voltage, the effect of improving the withstand voltage of the device

Active Publication Date: 2017-05-17
无锡橙芯微电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The technical problem to be solved by the present invention is to provide a low turn-on forward step-down voltage, high reverse withstand voltage, and can replace the Schottky device power diode

Method used

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  • A kind of preparation method of power diode
  • A kind of preparation method of power diode
  • A kind of preparation method of power diode

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Embodiment Construction

[0048] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0049] Such as figure 1 As shown, a power diode according to the present invention comprises a bottom electrode 1, a substrate layer 2, an N-type epitaxial layer 3 and a top electrode 4 from bottom to top, the top electrode 4 is the anode of the power diode, and the bottom electrode 1 is the negative pole of the power diode; wherein at least two grooves 5 are arranged laterally on the upper part of the N-type epitaxial layer 3, and between the N-type epitaxial layer 3 and the top electrode 4 between two adjacent grooves 5 pbody area 6;

[0050] The cross-section of the pbody region 6 is in a "concave" shape with an arc at the bottom, wherein the two convex parts on the upper part of the "concave" shape are the edge...

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Abstract

The invention relates to a power diode and a method for manufacturing the power diode. The power diode comprises a bottom electrode, a substrate layer, an N- type epitaxial layer and a top electrode, wherein the top electrode serves as the positive electrode of the power diode, the bottom electrode serves as the negative electrode of the power diode, at least two grooves are transversely formed in the upper portion of the N- type epitaxial layer in a spaced mode, and an MOS channel is formed in the portion, between every two adjacent grooves, of the N- type epitaxial layer. The power diode is made of silicon materials and can be obtained through an existing silicon semiconductor integrated circuit; special metal materials are not needed, and the method for manufacturing the power diode is compatible with an existing semiconductor production technology; the backward voltage resistance of the device is improved through p+ regions injected into the grooves; when backward voltage is applied to the device, the p+ exhaustion regions in the grooves expand and are connected, a backward current channel is cut off, and the voltage resistance of the device is improved; when the power diode operates in the forward direction, electricity is conducted through parasitic mosfet, and the forward starting voltage of the device is reduced.

Description

technical field [0001] The invention relates to a method for preparing a power diode, which belongs to the technical field of semiconductor manufacturing. Background technique [0002] Traditional rectifier diodes mainly include PN junction diodes and Schottky diodes. The PN junction diode has a large forward voltage drop VF and a long reverse recovery time Trr, but the PN junction diode has good stability and can work at high voltage; Schottky diodes are made of precious metals (such as gold, silver, titanium, etc. ) is in contact with the semiconductor to form a semiconductor device made of a heterojunction barrier, which has absolute advantages at low voltage: its forward voltage drop is small, the reverse recovery time is short, and it has a wide range of applications in high-speed fields. However, Schottky diodes have the following disadvantages: [0003] 1. The reverse leakage current is relatively high and unstable. In particular, its leakage current will increase ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/861H01L29/06H01L21/329H01L21/265
CPCH01L21/266H01L29/0615H01L29/6606H01L29/66128H01L29/8613
Inventor 王宇澄王根毅吴宗宪
Owner 无锡橙芯微电子科技有限公司
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