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Method for treating inner surface of chlorine trifluoride supply path in device using chlorine trifluoride

A chlorine trifluoride, treatment method technology, applied in the direction of circuit, gaseous chemical plating, coating, etc., can solve the problem of ClF3 concentration reduction, etc., and achieve the effect of reducing the inhibitory concentration, reducing the inhibitory concentration, and significant negative effects

Active Publication Date: 2014-09-10
IWATANI CORP
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  • Claims
  • Application Information

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Problems solved by technology

Therefore, in the film formation operating system of CVD equipment, PVD equipment, epitaxial growth equipment, etc., ClF 3 Adsorbed on the metals of the devices and supply paths that constitute the reaction chamber of the device, so that the ClF in the reaction chamber 3 Concentration decreased

Method used

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  • Method for treating inner surface of chlorine trifluoride supply path in device using chlorine trifluoride
  • Method for treating inner surface of chlorine trifluoride supply path in device using chlorine trifluoride
  • Method for treating inner surface of chlorine trifluoride supply path in device using chlorine trifluoride

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Embodiment 1

[0027] For comparison with and without pre-implementation of ClF 3 The effect of gas exposure treatment on etching treatment, by figure 1 In the device shown in , as the piping constituting the gas supply path (2), ClF was performed in advance under the conditions shown below. 3 The pipes exposed to gas and the pipes not exposed were etched under the conditions shown below with respect to samples formed by forming a polysilicon film placed in the processing chamber (1). In addition, as the reduction of ClF 3 The gas supply path (2) between the pneumatic valve (11) and the manual valve (12), which is the main part of the gas concentration, is formed with a pipe diameter of 1 / 4" and a pipe length of 4m (pipe inner wall surface area: 54636mm 2 ).

[0028] CIF 3 The pre-exposure treatment conditions are shown below.

[0029] CIF 3 Gas concentration: 100%;

[0030] Temperature: room temperature (20°C).

[0031] In addition, ClF 3 The pre-exposure was achieved by adding 100...

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Abstract

Provided is a method for treating the inner surface of a chlorine trifluoride supply path that enables reliable suppression of drops in the concentration of ClF3 in a reaction chamber during treatment work. A gas supply path (2) and a gas discharge path (3) are integrally connected to a treatment chamber (1) of a treatment device in which chlorine trifluoride is used as an etching gas. Chlorine trifluoride gas with a concentration equal to or greater than the concentration of the chlorine trifluoride gas supplied during etching treatment operation is allowed to act on the inner surfaces of at least the treatment chamber (1) and the gas supply path (2) from among the treatment chamber (1), the gas supply path (2), and the gas discharge path (3), thus coating the inner surfaces of at least the treatment chamber (1) and the gas supply path (2) with a fluoride film.

Description

technical field [0001] The present invention relates to a method against exposure to chlorine trifluoride (ClF 3 ) to form a treatment device with a coating made of fluoride and a method of treating the inner surface of the piping system connected to the treatment device. Background technique [0002] ClF is used as an etching gas in the operation of the film formation operating system in CVD equipment, PVD equipment, epitaxial growth equipment, etc. used in the manufacture of semiconductors, solar cells, photosensitive drums, etc. 3 . [0003] The ClF 3 It is easy to adsorb on the metal, and the fluorination reaction is easy to occur on the metal surface. Therefore, in the film formation operating system of CVD equipment, PVD equipment, epitaxial growth equipment, etc., ClF 3 Adsorbed on the metals of the devices and supply paths that constitute the reaction chamber of the device, so that the ClF in the reaction chamber 3 Concentration decreased. [0004] Therefore, t...

Claims

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Application Information

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IPC IPC(8): H01L21/3065H01L21/205
CPCC23C16/4404C23C16/45561C23C16/4405H01L21/67069H01L21/3065
Inventor 吉野裕小池国彦佐枝学真锅俊树
Owner IWATANI CORP
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