A kind of hit solar cell and its electrode preparation and connection method

Abstract

The invention discloses a HIT (Heterojunction with Intrinsic Thin Layer) solar cell and electrode preparation and series connection methods thereof. The HIT solar cell comprises a metal wire conduction band and solar cell pieces, wherein each solar cell piece comprises an N type silicon plate; the front side of each N type silicon plate is provided with an intrinsic amorphous silicon film and a P type amorphous silicon film; the back side of each N type silicon plate is provided with an intrinsic amorphous silicon film and an N type amorphous silicon film in sequence; the P type amorphous silicon films and the N type amorphous silicon films are provided with transparent conduction oxide films; one solar cell piece is arranged below the front half portion of the metal wire conduction band; the back half portion of the metal wire conduction band is provided with one solar cell piece. Compared with the conventional HIT solar cell, the method has the advantages that a main gate electrode and a fine gate electrode do not need to be printed, and solar cells can be connected in series without bus bars. On one hand, the metal wire portions of the metal wire conduction band are arranged in parallel on the front side or back side of the solar cell, and current on the surfaces of solar cells is collected and conducted out to realize the functions of a fine gate and a main gate; on the other hand, two solar cells are connected in series to serve as a bus bar.

Description

technical field [0001] The invention belongs to the field of manufacturing HIT solar cells and components, and relates to a HIT solar cell and a method for connecting them, in particular to a method for preparing a HIT solar cell and its electrodes and connecting them. Background technique [0002] Solar cells use the photovoltaic effect of the pn junction to convert light energy into electrical energy. HIT solar cell is a high-efficiency commercial solar cell. It is characterized by adding a layer of basic amorphous silicon layer between the emitter and the back high-concentration doped layer and the substrate. The structure is as follows: figure 1 shown. [0003] The manufacturing process of HIT solar cells is as follows: 1) N-type silicon wafers are cleaned and textured; 2) Intrinsic amorphous silicon films and P-type amorphous silicon films are prepared on the front side by PECVD; 3) Intrinsic non-crystalline silicon films are prepared on the back side by PECVD. cryst...

AI Technical Summary

Problems solved by technology

At present, there are two main problems with this material: First, the technical threshold of conductive silver glue specially used for HIT solar cells is relatively high, resulting in expensive materials; fill factor of solar cell

And the finished HIT cells need to be connected in series: connect the front and back sides of the two solar cells with conductive adhesive tape, and connect the cells in series one by one. This link requires a lot of work and high cost.

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