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Far-field detection method for near-field evanescent beam wave filed transmittance transmission characteristic function aiming at ultra-diffraction structural material

A technology of structural materials and transmission characteristics, applied in the direction of transmittance measurement, testing optical properties, etc., can solve the problems of limited lateral resolution, difficult quantification and detection of transmittance characteristics, etc., and achieve the effect of reducing the influence of light field

Active Publication Date: 2014-08-06
INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
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Problems solved by technology

[0005] The technical problem to be solved by the present invention is: in the fields of nano-image lithography and microscopic imaging, the existing technical methods for detecting transmission characteristics of near-field transmittance of super-diffraction structural materials, such as the lateral resolution of near-field detection SNOM, are limited , Moiré fringe detection can only observe a specific order, so it is difficult to quantitatively detect the transmittance characteristics of each evanescent wave order in the near-field area. We propose a method for super A far-field detection method for the transmission characteristic function of the evanescent wave light field transmittance of a diffractive structure material. The structure includes a transparent base layer, an excitation grating layer, a super-diffraction structure material layer, and a detection grating layer from top to bottom, and the illumination incident on the back of the transparent base Light passes through the excitation grating layer to excite evanescent wave orders, and the superdiffraction structure material layer can perform transverse wave vector spatial frequency high-pass filtering on the evanescent wave orders to form an evanescent wave with a specific transverse wave vector near-field transmittance In the wave-light field, the detection grating layer can convert the evanescent wave order into the transmission wave order and transmit it to the far field, and finally the detection light corresponding to the evanescent wave components can be received in the far field

Method used

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  • Far-field detection method for near-field evanescent beam wave filed transmittance transmission characteristic function aiming at ultra-diffraction structural material
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  • Far-field detection method for near-field evanescent beam wave filed transmittance transmission characteristic function aiming at ultra-diffraction structural material

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Embodiment 1

[0041] Embodiment 1, when both the excitation layer and the detection layer are one-dimensional grating patterns, the excitation layer has a line width of 100nm and a period of 200nm, and the detection layer has a line width of 115nm and a period of 230nm, using far-field detection diffraction to reflect the superdiffraction structure material Transmission characteristic function of evanescent light field transmittance.

[0042] The far-field detection of the transmission characteristic function of the near-field evanescent wave light field transmittance of the superdiffraction structure material is as shown in the appendix of the specification figure 1 As shown, the specific conditions are: 1 is the quartz substrate filled with the active layer; 2 is the active layer TiO 2 Grating, TiO 2 The layer thickness is 75nm, the grating depth is 40nm, the period is 200nm, and the duty ratio is 0.5; 3 is the dielectric layer MgF in the superdiffraction structure material layer (dielec...

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Abstract

The invention provides a far-field detection method for a near-field evanescent beam wave filed transmittance transmission characteristic function aiming at an ultra-diffraction structural material. According to the method, adopted devices comprise a transparent substrate layer, an exciting grating layer, ultra-diffraction structural material layers and a detecting grating layer from top to bottom, wherein incident lights from the back surface of the transparent substrate layer are excited with evanescent wave levels after passing the exciting grating layer, the ultra-diffraction structural material layers can perform spatial frequency high-pass filtering of a horizontal wave vector on the evanescent wave levels so as to form an evanescent beam wave filed with the specific near-field transmission of the horizontal wave vector, the detecting grating layer can convert the evanescent wave levels to be transmitted wave levels to be transmitted to a far field, and detection light corresponding to evanescent wave components one by one can be received at the far field finally. The method can be used in the far-field detection of the near-field evanescent beam wave filed transmittance transmission characteristic function of the ultra-diffraction structural material, so as to realize the horizontal wave vector near-field distribution of the evanescent wave filed as well as the qualitative analysis and quantitative detection of the corresponding wave vector energy transmittance of the evanescent wave filed.

Description

technical field [0001] The invention belongs to the field of nano-lithography processing technology and microscopic imaging, and relates to a far-field detection method for the transmission characteristic function of the near-field evanescent wave light field transmittance of a super-diffraction structure material. Background technique [0002] At present, the feature size imaging limit of optical systems such as lithography and microscopy has entered the nanometer level (<<λ), and superdiffraction structure materials have been widely concerned and applied to overcome diffraction due to their unique evanescent wave reduction characteristics. limit. In recent years, studies have found that superdiffraction structural materials, such as metal dielectric multilayer films, have the characteristics of spatial frequency band-pass filtering, and can selectively transmit the transverse wave vector of near-field evanescent waves, so as to realize the transmission of evanescent ...

Claims

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Application Information

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IPC IPC(8): G01N21/59G01M11/02
Inventor 罗先刚赵泽宇王长涛王彦钦姚纳胡承刚蒲明薄王炯曾波马晓亮
Owner INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
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