Piezoresistive electronic skin and preparation method thereof

Abstract

The invention provides piezoresistive electronic skin and a preparation method thereof. A carbon nano tube thin film is adopted as an electroconductive layer, and a substrate is made by materials, with micro-nano patterns, like polydimethyl siloxane, polyphenyl dioctyl phthalate ethyl diester, polyvinyl alcohol, polyvinyl formal and polyethylene, so that the substrate is enabled to have the advantages of high flexibility, easiness in bending and the like, and the piezoresistive electronic skin is low in working voltage, small in power consumption, high in flexibility and short in response time. More importantly, the patterned flexible substrate is adopted as a base body, so that sensitivity, of the electronic skin, on outside small acting force is improved greatly.

Description

technical field [0001] The invention relates to the field of sensors, in particular to a piezoresistive electronic skin and a preparation method thereof. Background technique [0002] Robots, as automation devices of artificial intelligence, are more and more integrated into the daily life of human beings, and perform related work instead of human beings in dangerous industries such as high temperature, high pressure, and explosive discharge. The current robot system has achieved many functions such as human vision, hearing and smell through the integration of various sensors. However, how to have a sensitive tactile function like humans has always been one of the challenging problems faced by robotic systems. The birth of electronic skin will bring great changes to the robot system, so that the robot can obtain more information from the external environment. [0003] Although since 2004, some research groups in Japan and the United States have reported electronic skin bas...

AI Technical Summary

Problems solved by technology

[0003] Although since 2004, some research groups in Japan and the United States have reported electronic skin based on organic field effect transistor type, capacitive type and piezoresistive type, but each has advantages and disadvantages, for example, complex processing technology and device structure, relatively Large driving voltage, low sensitivity, and the use of rigid silicon-based materials make the device non-transparent and non-flexible, which also limits the scope of use of the device.

Images