Gate drive circuit and method and display device

Abstract

The invention provides a gate drive circuit and method and a display device and relates to the technical field of display. The method includes the steps that gate row drive scanning is performed on shifting register units located in a first area in the gate drive circuit; after gate row drive scanning of the shifting register units in the first area is finished, touch scanning is performed; after touch scanning is finished, the last-level shifting register unit located in the first area is scanned again so that the last-level shifting register unit located in the first area can be used for pre-charging a first-level shifting register unit located in a second area; gate row drive scanning is performed on shifting register units located in the second area in the gate drive circuit, and the last-level shifting register unit located in the first area is in cascade connection with the first-level shifting register located in the second area. The method can overcome the defect that the row pixel charging rate is insufficient and solve the problem of dark lines or poor bright lines.

Description

Technical field [0001] The present invention relates to the field of display technology, and in particular to a gate driving circuit, a driving method thereof, and a display device. Background technique [0002] With the increasing popularity of touch-sensitive display devices, people have higher and higher quality requirements for touch-sensitive display devices. In-cell touch technology is due to its thin thickness and touch sensitivity. It is widely used because of its high advantages. [0003] The in-cell touch technology means that the touch elements are integrated into the display panel, so that the panel itself has a touch function, and the touch effect and application can be achieved without additional bonding and assembly with the touch panel. Take a typical TFT-LCD (Thin Film Transistor-Liquid Crystal Display) as an example. Its characteristic is that the manufacturing technology of the touch sensing element is completed in the TFT-LCD standard manufacturing process, bec...

AI Technical Summary

Problems solved by technology

In the existing technology, such as image 3 As shown, the shift register unit takes the simplest 4T1C structure as an example, when the figure 1 During the H-Blank timing scan shown, since the N / 2+1 row shift register unit is the first row of the second 1 / 2 display scan, but its pull-up control PU node outputs at row N / 2 It has been charged to a high level, because there is a long scan time between the output of N / 2 and N / 2+1 rows, so the potential of the PU point will leak through the connected TFT, which will seriously affect the N / 2+1 The pre-charging of the row shift register unit makes the voltage drop when the N / 2+1 row shift register unit outputs, resulting in insufficient charging rate of the pixels in this row, and poor dark or bright lines appear.

Images