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Glass composition for semiconductor junction protection, method for manufacturing semiconductor device, and semiconductor device

A technology of glass composites and manufacturing methods, which is applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., to achieve the effect of reducing bending

Active Publication Date: 2014-06-25
SHINDENGEN ELECTRIC MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0023] However, glass materials with lead silicate as the main component contain lead, which has a greater impact on the environment, so in the near future, glass materials with lead silicate as the main component will be banned from use

Method used

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  • Glass composition for semiconductor junction protection, method for manufacturing semiconductor device, and semiconductor device
  • Glass composition for semiconductor junction protection, method for manufacturing semiconductor device, and semiconductor device
  • Glass composition for semiconductor junction protection, method for manufacturing semiconductor device, and semiconductor device

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Embodiment approach 1

[0076] Embodiment 1 is an embodiment related to the glass compound for semiconductor junction protection.

[0077] The glass compound for semiconductor junction protection according to Embodiment 1 contains at least SiO 2 , B 2 o 3 , Al 2 o 3 , ZnO, and all alkaline earth metal oxides in CaO, MgO, and BaO, as well as nickel oxides, and substantially does not contain Pb, As, Sb, Li, Na, K. In this case, the inclusion of a certain specific component includes not only the case of containing only the certain specific component, but also the case of containing components that may be generally contained in glass composites in addition to the certain specific component. In addition, substantially not containing a certain specific element means that the certain specific element is not contained as a component, but glass composites in which the above-mentioned certain specific element is mixed as an impurity in the raw materials of each component constituting the glass are not excl...

Embodiment approach 2

[0094] Embodiment 2 is an embodiment related to the glass compound for semiconductor junction protection.

[0095] The glass compound for semiconductor junction protection according to Embodiment 2 contains at least SiO 2 , B 2 o 3 , Al 2 o 3 , ZnO, at least two alkaline earth metal oxides (CaO and BaO), and nickel oxide, and substantially free of Pb, As, Sb, Li, Na, K. In this case, the inclusion of a certain specific component includes not only the case of containing only the certain specific component, but also the case of containing components that may be generally contained in glass composites in addition to the certain specific component. In addition, substantially not containing a certain specific element means that the certain specific element is not contained as a component, but glass composites in which the above-mentioned certain specific element is mixed as an impurity in the raw materials of each component constituting the glass are not excluded. In addition,...

Embodiment approach 3

[0105] Embodiment 3 is an embodiment related to a glass compound for semiconductor junction protection.

[0106] The glass compound for protecting a semiconductor junction according to the third embodiment basically contains the same components as the glass compound for protecting a semiconductor junction according to the first embodiment, but is different from the semiconductor junction according to the first embodiment in that it does not contain nickel oxide. The protective glass compound is different. That is, the glass compound for semiconductor junction protection according to Embodiment 3 contains at least SiO 2 , B 2 o 3 , Al 2 o 3 , ZnO, and all alkaline earth metal oxides in CaO, MgO and BaO, and substantially do not contain Pb, As, Sb, Li, Na, K. In this case, the inclusion of a certain specific component includes not only the case of containing only the certain specific component, but also the case of containing components that may be generally contained in gl...

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Abstract

A glass composition for semiconductor junction protection, which contains at least SiO2, B2O3, Al2O3, ZnO and at least two alkaline earth metal oxides selected from among CaO, MgO and BaO, but does not substantially contain Pb, As, Sb, Li, Na and K. This glass composition for semiconductor junction protection has an average linear expansion coefficient within the range from 3.33 10-6 to 4.13 10-6 for the temperature range from 50 DEG C to 550 DEG C. A glass composition for semiconductor junction protection of the present invention enables the production of a semiconductor device having high withstand voltage with use of a glass material that contains no lead as in the cases where conventional ''glass materials that are mainly composed of lead silicate'' are used.

Description

technical field [0001] The present invention relates to a glass compound for semiconductor junction protection, a method for manufacturing a semiconductor device, and a semiconductor device. Background technique [0002] Conventionally, there is known a semiconductor device manufacturing method in which a glass layer for passivation covering a PN junction exposed portion is formed in the process of manufacturing a mesa semiconductor device (for example, refer to Patent Document 1). [0003] Figure 14 and Figure 15 It is an explanatory diagram showing such a conventional method of manufacturing a semiconductor device. Figure 14 (a) ~ Figure 14 (d) and Figure 15 (a) ~ Figure 15 (d) is a diagram of each process. [0004] Such as Figure 14 and Figure 15 As shown, the conventional semiconductor device manufacturing method includes "semiconductor base formation process", "trench formation process", "glass layer formation process", "photoresist (photoresist) formation p...

Claims

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Application Information

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IPC IPC(8): H01L21/316H01L29/861H01L29/868
CPCH01L29/8613H01L2924/0002H01L29/66136H01L23/291H01L21/76232H01L29/8611H01L21/02112H01L23/3171C03C3/093C03C8/04C03C8/24C03C2207/00H01L21/02164H01L21/02175H01L21/02178H01L21/02192H01L21/02345H01L21/56H01L21/761H01L21/76224H01L23/3185H01L2924/00
Inventor 六鎗広野伊东浩二小笠原淳伊藤一彦
Owner SHINDENGEN ELECTRIC MFG CO LTD
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