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Supper barrier rectifier integrating Schottky diodes and manufacturing method thereof

A Schottky diode and gate technology, applied in semiconductor/solid-state device manufacturing, electrical solid-state devices, semiconductor devices, etc., can solve the problem of high-precision rectifiers that cannot suppress reverse leakage current

Active Publication Date: 2014-06-25
CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, even if Schottky diodes are deliberately introduced into some MOS devices, they cannot be substantially applied in high-precision rectifiers due to the inability to suppress the reverse leakage current.

Method used

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  • Supper barrier rectifier integrating Schottky diodes and manufacturing method thereof
  • Supper barrier rectifier integrating Schottky diodes and manufacturing method thereof
  • Supper barrier rectifier integrating Schottky diodes and manufacturing method thereof

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Embodiment Construction

[0021] see Figure 1A , shows a cross-sectional view of a super-barrier rectifier SBR integrated with a Schottky Barrier Diode (SBD). A semiconductor substrate includes a base substrate 101 and an epitaxial layer 102 carried on the base substrate 101, a body layer 103 is formed on the top of the epitaxial layer 102, and a top doped layer is formed on the top of the body layer 103 104. The top surface of the epitaxial layer 102 is the front surface of the semiconductor substrate or wafer, and the bottom surface of the bottom substrate 101 is the back surface opposite to the front surface. In the present invention, the top doped layer 104 can also be defined as a source / drain top doped layer. For the convenience of description, it is assumed that the bottom substrate 101 is heavily doped N+ type, the doping concentration of the epitaxial layer 102 is lower than that of the bottom substrate is N- type, the body layer 103 is P type and the top doped layer 104 is doped N+ type wi...

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Abstract

The invention mainly relates to power semiconductor rectifiers, in particular to a super barrier rectifier integrating Schottky diodes and a manufacturing method thereof. A groove type SBR component is manufactured, and is provided with body diodes connected with MOS tubes in parallel and the Schottky diodes, the threshold voltage of the barrier MOS tubes is lower than the barrier voltage of a conventional PN junction, and the voltage of the forward connection of the SBR is lower than the forward connection voltage of a conventional PN diode, the SBR is made to have fast on-off speed, and have high reverse withstand voltages.

Description

technical field [0001] The present invention mainly relates to power semiconductor rectifiers, more precisely, to design a super-barrier rectifier and provide an optimized method for preparing the super-barrier rectifier, which is integrated with an integrated Schottky diode. Background technique [0002] So far, power semiconductor rectifiers have been widely used in power switching and power converters. For example, some prior art discloses various types of Super Barrier Rectifiers (Super Barrier Rectifier, SBR), which integrate parallel rectification between the anode and the cathode. diodes and MOS transistors to form a super-barrier rectifier SBR. Typically, Chinese patent application 01143693.X discloses "Manufacturing Power Rectifier Devices to Change Operating Parameters and Devices", and US Patent Application US6331455B1 discloses a "Power Rectifier and Its Manufacturing Method", etc. These The literature introduces in detail the solution and preparation method of ...

Claims

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Application Information

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IPC IPC(8): H01L27/08H01L29/872H01L21/82
Inventor 沈健
Owner CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD
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