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Method for improving underetch anomalies of patterned sapphire substrates

A technology for patterning sapphire and substrates, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of substrates not meeting customer needs, waste, pattern size changes, etc., and achieve good shape modification effect, Guaranteed clean, low bombardment energy

Active Publication Date: 2017-04-05
HAIDIKE NANTONG OPTOELECTRONICS TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method easily causes large changes in the size of the pattern, so that the substrate after re-engraving does not meet customer needs, resulting in waste of production

Method used

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  • Method for improving underetch anomalies of patterned sapphire substrates
  • Method for improving underetch anomalies of patterned sapphire substrates
  • Method for improving underetch anomalies of patterned sapphire substrates

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Embodiment Construction

[0019] The preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings, so that the advantages and features of the present invention can be more easily understood by those skilled in the art, so as to define the protection scope of the present invention more clearly.

[0020] See attached figure 1 As shown, the present embodiment provides a method for improving the abnormal etching of the bottom of the patterned sapphire substrate, including the following steps:

[0021] Provide F-based plasma;

[0022] applying kinetic energy in a predetermined direction to the F-based plasma;

[0023] Make the F-based plasma bombard the bottom of the patterned sapphire substrate to etch the surface of the abnormal region from top to bottom for a predetermined time, so that at least part of the etched surface generates AlF 3 .

[0024] Specifically, by using inorganic gases containing fluorine (F), such as CHF 3 , SF 6 et...

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Abstract

The invention discloses a method for overcoming abnormal bottom etching of a patterned sapphire substrate. The method comprises the steps of providing an F-based plasma body; applying kinetic energy in a preset direction to the F-base plasma body; making the F-based plasma body bombard the surface of the abnormal bottom etched area of the patterned sapphire substrate from top to bottom for a preset period of time to enable AlF3 to be generated on at least part of the etched surface. Due to the fact that chemical reaction can occur easily between the F-based plasma body and the Al element in sapphire to generate the volatile AlF3, the cleanness of the etched surface is guaranteed. Furthermore, due to the fact that the atomic mass of F base is lower than that of BCl2+, bombard energy is low, physical damage and radiation damage to the surface can not be caused easily, and thus a good appearance modification effect is guaranteed and the size is kept relatively stable during modification.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronic chip manufacturing. Background technique [0002] In the field of semiconductor optoelectronic chip manufacturing, dry etching is mainly used to pattern the sapphire substrate (PSS) in the prior art, and the etching gas usually used is BCl 3 . At present, people in the industry mostly choose patterned substrates with triangular longitudinal sections, but in actual manufacturing, it is easy to produce quasi-triangular or arc-shaped patterned substrates with certain corners on the edges. When faced with this kind of problem, people usually continue to use BCl 3 to perform re-engraving to eliminate uneven edges. However, this method is likely to cause a large change in the size of the pattern, so that the substrate after re-engraving does not meet customer needs, resulting in waste of production. Contents of the invention [0003] The purpose of the present invention is to provide a ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
CPCH01L21/02019
Inventor 陈起伟魏臻孙智江施荣华
Owner HAIDIKE NANTONG OPTOELECTRONICS TECH CO LTD
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