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Arrangement method of copper-indium-gallium-selenium thin-film battery co-evaporation linear sources

A thin-film battery and copper indium gallium selenide technology, which is applied in vacuum evaporation plating, circuits, electrical components, etc., can solve problems such as the inability to realize the flexible ratio process of coating, and achieve the effect of improving the flexibility of adjustment

Inactive Publication Date: 2014-06-18
DONGTAI HI TECH EQUIP TECH (BEIJING) CO LTD
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AI Technical Summary

Problems solved by technology

However, due to the different boiling points of each metal raw material, the vaporization in the same evaporation source will also have a sequence, and it is also impossible to achieve a flexible ratio process during coating.

Method used

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  • Arrangement method of copper-indium-gallium-selenium thin-film battery co-evaporation linear sources
  • Arrangement method of copper-indium-gallium-selenium thin-film battery co-evaporation linear sources

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Embodiment Construction

[0027] The technical solutions of the present invention will be further described in detail through the following examples in conjunction with the accompanying drawings, but are not limited to the content of this example.

[0028] A method for arranging a co-evaporation linear source of a copper indium gallium selenide thin film battery, such as figure 1 and figure 2 As shown, including the glass substrate 1 and the linear evaporation sources 3, 4, 5, there are altogether 6 linear evaporation sources 3, 4, 5, which are longitudinally and symmetrically arranged on the lower sides of the glass substrate 1 along the moving direction of the glass substrate 1, namely Along the moving direction of the glass substrate 1, three linear evaporation sources are evenly arranged on the lower side of one side of the glass substrate 1. Only one kind of raw material is placed in each linear evaporation source, and the raw material in each linear evaporation source is a separate metal. The r...

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Abstract

The invention relates to an arrangement method of copper-indium-gallium-selenium thin-film battery co-evaporation linear sources. The arrangement method comprises a glass substrate and the linear evaporation sources, the linear evaporation sources are respectively longitudinally arranged on the lower sides of two sides of the glass substrate along the moving direction of the glass substrate, only one kind of raw material is placed in each linear evaporation source, and the linear evaporation sources under each side of the glass substrate is in inclination arrangement. When the glass substrate goes into an evaporation zone, the glass substrate can simultaneously contact uniformly mixed raw material steams, the raw material steam of each linear evaporation source can be used for arrange the evaporation zone according to a preset process ratio, the adjustment flexibility of the raw material ratio in the battery production process is effectively improved, and besides the utilization rate of the raw materials can be improved.

Description

technical field [0001] The invention relates to a method for arranging a co-evaporation linear source of a copper indium gallium selenium thin film battery. Background technique [0002] The future market development of photovoltaic applications, especially the application of photovoltaic power plants connected to the grid, depends critically on the potential to reduce the production cost of solar cells. The production process of thin-film solar cells consumes less energy, which has the potential to greatly reduce raw material and manufacturing costs; at the same time, thin-film solar cells can still generate electricity under low light conditions. Therefore, the current market demand for thin-film solar cells is gradually increasing, and the technology of manufacturing thin-film solar cells has become a research hotspot in recent years. [0003] Today's photovoltaic thin film batteries can be divided into silicon-based thin film batteries, cadmium telluride thin film batte...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/24C23C14/54H01L31/18
CPCY02P70/50
Inventor 于大洋王葛丁建
Owner DONGTAI HI TECH EQUIP TECH (BEIJING) CO LTD
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