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Hot isostatic pressure diffusion welding method for tantalum target and aluminum back plate

A technology of hot isostatic pressure diffusion and welding method, applied in welding equipment, non-electric welding equipment, metal processing equipment and other directions, can solve the problems of low bonding strength, large difference in melting point, melting of solder, etc., and achieve the ability to resist deformation under heat Strong, improve the bonding strength, the effect of high bonding tightness

Inactive Publication Date: 2014-05-21
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Abstract
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Problems solved by technology

[0004] For the target assembly composed of tantalum target and aluminum back plate, since the melting point of tantalum is 2996°C and the melting point of aluminum is 660.37°C, the melting point of the two materials is quite different, and the existing fusion welding equipment cannot realize large-scale welding. Therefore, it is not suitable to use fusion welding to weld the tantalum target and the aluminum back plate together; When welding together, not only the bonding strength between the two is low, but also the high temperature environment will melt the solder, making the sputtering process impossible
Even if diffusion welding is used to weld the tantalum target and the aluminum back plate, the welding quality of the target assembly obtained by the existing process is still very unsatisfactory

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  • Hot isostatic pressure diffusion welding method for tantalum target and aluminum back plate

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Embodiment Construction

[0026] The hot isostatic pressure diffusion welding welding method of the tantalum target and the aluminum back plate provided by the embodiment of the present invention includes such as figure 1 Each of the steps shown will be described in detail below.

[0027] S1, provide tantalum target and aluminum back plate.

[0028] In the embodiment of the present invention, an aluminum back plate and a tantalum target are firstly provided. According to the actual requirements of the application environment and sputtering equipment, the shape of the tantalum target can be any of circular, rectangular, annular, conical or other similar shapes (including regular and irregular shapes), and the preferred solution is circular shape. Its diameter size is to add a machining allowance of 2mm~5mm to the design size, and its thickness dimension is to add a machining allowance of 1mm~3mm to the design size. The purpose of setting the processing allowance is to provide a relatively large proce...

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Abstract

The invention provides a hot isostatic pressure diffusion welding method for a tantalum target and an aluminum back plate. The hot isostatic pressure diffusion welding method comprises the following steps: placing the tantalum target and the aluminum back plate into a vacuum sheath; vacuumizing the vacuum sheath; placing the vacuum sheath into a hot isostatic pressure furnace, raising the temperature and pressure, and keeping the temperature and pressure; decompressing and cooling the vacuum sheath; removing the vacuum sheath, and taking a target assembly formed by welding the tantalum target and the aluminum back plate out. By adopting the hot isostatic pressure diffusion welding method for the tantalum target and the aluminum back plate provided by the invention, the welding strength of a tantalum target assembly obtained by welding can be up to 150Mpa, and the yield is over 98 percent. The tantalum target assembly formed by using the method has the advantages of high combination firmness, high heating deformation resistance and the like.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a hot isostatic pressure diffusion welding method for a tantalum target material and an aluminum back plate. Background technique [0002] In the semiconductor industry, the target assembly is composed of a target that meets the sputtering performance and a back plate that can be combined with the target and has a certain strength. The back plate can play a supporting role when the target assembly is assembled to the sputtering base, and has the effect of conducting heat. During the sputtering process, the working environment of the target assembly is relatively harsh. For example, the ambient temperature of the target assembly is relatively high, such as 300°C to 600°C; in addition, one side of the target assembly is cooled by cooling water, while the other side is kept at -9 In the high vacuum environment of Pa, a huge pressure difference is formed on the opposite s...

Claims

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Application Information

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IPC IPC(8): B23K20/22
CPCB23K20/021B23K20/14B23K20/2333B23K20/24
Inventor 姚力军相原俊夫大岩一彦潘杰王学泽张金林
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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