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Photo-assisted heating system for hydride vapor phase epitaxy

A hydride gas phase, heating system technology, applied in the directions from chemical reactive gases, chemical instruments and methods, single crystal growth, etc. Effect

Inactive Publication Date: 2014-05-14
SINO NITRIDE SEMICON +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the system design uses resistance heating, and is limited to asymmetric systems such as horizontal reactors, and cannot be used for cylindrically symmetrical vertical reactors

Method used

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  • Photo-assisted heating system for hydride vapor phase epitaxy
  • Photo-assisted heating system for hydride vapor phase epitaxy
  • Photo-assisted heating system for hydride vapor phase epitaxy

Examples

Experimental program
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Embodiment Construction

[0016] Option 1: If figure 1 , The outer wall 2 of the quartz tube of the vertical HVPE reactor 1 is surrounded by a resistance heater 3 (the resistance heater is generally divided into three or four zones, here simplified as a single zone). On the basis of the resistance heater, an infrared lamp heater 4 is arranged inside the reactor. Arranged directly above the graphite substrate 8 and directly below the shower head 9 . Relying on the infrared lamp 4A and the hemispherical reflector 4B, the radiant light is aimed at the center of the graphite substrate 8 and its surroundings for irradiation, and the central part of the graphite substrate is rapidly heated to compensate for the temperature difference between the center temperature of the graphite disk and the heat at the edge.

[0017] Option 2: If figure 2 , several infrared lamp heaters 5 are evenly arranged outside the reactor 1, around the outer wall 2 of the quartz tube, and at an angle of about 45 degrees above the ...

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Abstract

The invention discloses a photo-assisted heating system for a multi-plate hydride vapor phase epitaxy (HVPE) reactor. The photo-assisted heating system comprises an infrared light heater which is placed inside the reactor and right above a graphite substrate, an infrared light heater which is placed at the outer bottom of the reactor and below the graphite substrate, an infrared light heater which is placed outside the reactor and above the lateral upper part or below the graphite substrate to one side and encircles a reactor quartz tube, and a resistance wire heater which encircles the other parts of the reactor quartz tube. By adopting the photo-assisted heating system provided by the invention, the substrate can be rapidly and evenly heated, and especially, the requirements of evenly heating the large-area substrate can be met.

Description

technical field [0001] The invention relates to a vapor phase epitaxy device for preparing semiconductor materials, in particular to an infrared light auxiliary heating system for hydride vapor phase epitaxy (HVPE). Background technique [0002] Vapor phase epitaxy (VPE) technology is widely used to prepare thin or thick semiconductor films, among which hydride vapor phase epitaxy (HVPE) technology has the characteristics of fast growth rate and low production cost, and is very suitable for the growth of group III nitride semiconductor materials, such as nitrogen Growth of gallium nitride (GaN) thick films. In order to grow high-quality GaN thick films in large batches, it is desirable to obtain uniform reaction precursor concentration and uniform substrate temperature on larger substrates or larger deposition areas in HVPE reaction chambers. These factors are very important, which directly affect the quality and cost of semiconductor devices, thus affecting the competitive...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/10
Inventor 左然刘鹏童玉珍张国义
Owner SINO NITRIDE SEMICON
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