Three-dimensional integrated multi-layer stacked micro-shielded mems filter bank

A multi-layer stacking, three-dimensional integration technology, applied in waveguide-type devices, coupling of optical waveguides, components of TV systems, etc., to reduce the area, reduce microwave leakage, and facilitate integration.

Active Publication Date: 2016-06-08
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Enabling structures that would otherwise be difficult to achieve

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  • Three-dimensional integrated multi-layer stacked micro-shielded mems filter bank
  • Three-dimensional integrated multi-layer stacked micro-shielded mems filter bank
  • Three-dimensional integrated multi-layer stacked micro-shielded mems filter bank

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Embodiment

[0015] control figure 1 , 2 , 3, 4, three-dimensionally integrated multi-layer stack structure micro-shielding MEMS filter group, its structure includes A filter, B filter; described A filter includes A substrate 101 and B substrate 102, wherein in A Metal is deposited on the upper surface of the substrate 101 to form the A microwave coupling line resonator 103 , the A signal input transmission line 104 , the A signal output transmission line 105 and the A ground metal surface 106 .

[0016] The upper surface of the A substrate 101 and the lower surface of the B substrate 102 are aligned, and an A filter is formed by using a MEMS alignment bonding process.

[0017] Described B filter, its structure comprises C substrate 201 and D substrate 202, deposits metal on C substrate 201 upper surface to form B microwave coupled line resonator 203, B signal lead-in transmission line 204, B signal lead-out transmission line 205 and B ground metal plane 206 .

[0018] The upper surface...

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Abstract

The present invention provides a three-dimensionally integrated multi-layer stacked structure micro-shielding MEMS filter group, which includes the following features: the filter group includes two filters, respectively A filter and B filter, and 4 layers of substrate materials, A filter structure includes bottom-up A substrate and B substrate, B filter structure includes bottom-up C substrate and D substrate; the metal surface between B substrate and C substrate is a filter group Provide signal input and output; the signals of the two filters are separately drawn out. Advantages: Two independent MEMS filters are integrated in a three-dimensional monolithic chip using MEMS technology, which reduces the area of ​​traditional filter components and is easy to achieve integration. It adopts a fully sealed cavity structure, which reduces microwave leakage and avoids on-chip Pollution of the internal structure of the chip by water flow, debris, etc. in subsequent processes such as separation; provides a solution for vertically integrating two filters, which can be extended to the integration of multiple filter banks.

Description

technical field [0001] The invention relates to a three-dimensionally integrated multi-layer stacked micro-shielding MEMS filter bank, which belongs to the cross-technical field of microwave circuits, microelectronics and micromechanical (MEMS) systems, and relates to filters in microwave working frequency bands. Background technique [0002] At present, the switch filter bank is widely used in radio frequency (RF) front-end transceiver systems, communication systems, and electronic systems in aviation, aerospace and other systems. It can effectively enhance the system's transceiver suppression ability, and can well suppress the image frequency at the receiving end. The out-of-band spurs can be well suppressed at the transmitting end, and the performance of the system can be enhanced. [0003] The current switch filter component is mainly composed of a switch, a control circuit and a plurality of filters in different frequency bands. The control circuit controls the conducti...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01P1/207B81B7/02
Inventor 郁元卫侯芳朱健
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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