Pixel unit with wide dynamic range, manufacturing method thereof, and image sensor formed by same

A wide dynamic range, pixel unit technology, applied in the field of image sensors, can solve the problem of low cost performance, achieve the effect of improved control, simple process, and improved dynamic range

Active Publication Date: 2014-05-07
BYD SEMICON CO LTD
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the above method can realize a wide dynamic image sensor, but in the case of the same resolution, the chip area of ​​the image sensor will be additionally increased, and the cost performance is low.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Pixel unit with wide dynamic range, manufacturing method thereof, and image sensor formed by same
  • Pixel unit with wide dynamic range, manufacturing method thereof, and image sensor formed by same
  • Pixel unit with wide dynamic range, manufacturing method thereof, and image sensor formed by same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0029] In describing the present invention, it should be understood that the terms "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", "vertical", The orientation or positional relationship indicated by "horizontal", "top", "bottom", "inner", "outer", etc. are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than Nothing indicating or implying that a referenced device or elem...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a pixel unit with a wide dynamic range, a manufacturing method thereof, and an image sensor formed by the same. The pixel unit comprises a photoelectric diode, a transmission gate transistor, a floating diffusion node, a reset resistor, a source follower transistor and a row gate transistor which are formed on the same substrate. The pixel unit further comprises a PINNED structure connected with the floating diffusion node. The pixel unit realizes the nonlinear sensitivity of the image sensor through controlling depletion voltage of the PINNED structure. The manufacturing method is simple in process and compatible with the CMOS manufacturing process in the prior art. The image sensor provided by the invention adopts the pixel unit with the PINNED structure to form a pixel array, realizes the nonlinear sensitivity of the image sensor, not only can improve control for an overexposed area by the image sensor, but also can improve the visibility of a dark area, thereby improving the dynamic range of the image sensor.

Description

technical field [0001] The invention belongs to the field of basic electrical components and relates to the preparation of semiconductor devices, in particular to a pixel unit with a wide dynamic range, a manufacturing method of the pixel unit and an image sensor composed of the pixel unit. Background technique [0002] In recent years, the CMOS image sensor industry has developed rapidly. Image sensor manufacturers have introduced products with superior performance and smaller chip area. With the reduction of pixel size, the cost has been greatly reduced, but some performance has been significantly restricted, such as dynamic range and sensitivity. , signal-to-noise ratio, etc. In order to improve the dynamic range of the chip, large and small pixels or pixels with a large and small FD (floating diffusion node) structure are mainly used to achieve a wide dynamic range. In the large and small pixel method, one pixel unit contains two pixels - a large pixel and a small pixel...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H04N5/374
CPCH01L27/14616H01L27/14643H01L27/1461H01L27/14683H01L27/14698H04N25/75
Inventor 张彩婷刘坤傅璟军胡文阁
Owner BYD SEMICON CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap