On-track monitoring method for space single event latchup effect

Abstract

The invention belongs to the technical field of space radiation effect and strengthening, and particularly relates to an on-track monitoring method for space single event latchup effect. The method is based on a precision resistor, an over-current detection circuit, a counting latch, a latchup protection switching circuit, a power system and a watch dog counting circuit, wherein the watch dog counting circuit comprises two stages; the precision resistor is connected with the over-current detection circuit; the over-current detection circuit is also connected with the counting latch and the latchup protection switching circuit; the latchup protection switching circuit is also connected with the watch dog counting circuit and the power system. The monitoring method can realize space single event latchup effect monitoring of different track environment, and simultaneously provides a quick and accurate universality method for monitoring and evaluating deep space detection single event latchup effect.

Description

technical field [0001] The invention belongs to the technical field of space radiation effects and reinforcement, and in particular relates to an on-orbit monitoring method for space single-event locking effects. Background technique [0002] The single event effect caused by the interaction between a single charged particle in space and electronic devices is one of the main factors affecting the safe operation of spacecraft in orbit. CMOS devices are widely used in spacecraft electronic systems because of their low power consumption and low noise interference. However, the single event lock-in effect caused by a single high-energy particle in a CMOS device can cause permanent damage to the hardware in a very short period of time, leading to the failure of the spacecraft's electronic system and seriously affecting the spacecraft's on-orbit life. [0003] With the continuous development of semiconductor process technology, the integration of electronic devices is getting hig...

AI Technical Summary

Problems solved by technology

However, there is also a phenomenon called "single particle micro-locking" in SEL, that is, after high-energy particles incident on the chip lead to the conduction of the parasitic transistor, the instantaneous increase of the circuit current causes the bias voltage of the transistor to drop, and the parasitic transistor cannot maintain conduction. So that the locking current disappears after a short period of time, and cannot cause the action of the protection circuit

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