High-voltage ESD protective device with dual latch-up resistance and of annular LDMOS-SCR structure

Abstract

The invention discloses a high-voltage ESD protective device with dual latch-up resistance and of an annular LDMOS-SCR structure. The high-voltage ESD protective device with the dual latch-up resistance and of the annular LDMOS-SCR structure can be applied to an on-chip IC. The high-voltage ESD protective device with the dual latch-up resistance and of the annular LDMOS-SCR structure comprises a P type substrate, an N type buried layer, a first P trap, a first N trap, a second P trap, a P adulterant, a second N trap, a third P trap, an isolation area, a first P+, a first N+, a second N+, a second P+, a third N+, a third P+, a fourth N+, a fourth P+, a fifth N+, a sixth N+, a fifth P+, a metal anode and a metal cathode, wherein a Zener breakdown ESD current discharging path is formed by the second N+, the second P+, the first N+ and the first P+ or by the fourth P+, the fifth N+, the sixth N+ and the fifth P+. According to the high-voltage ESD protective device with the dual latch-up resistance and of an annular LDMOS-SCR structure, the ESD robustness of the device can be improved, the maintaining voltage can be improved, and the trigger voltage can be reduced; due to the design of the annular layout of the LDMOS-SCR structure, the on resistance can be reduced, and the maintaining current can be improved; the ESD protective capacity of the dual latch-up resistance is achieved.

Description

technical field [0001] The invention belongs to the field of electrostatic protection of integrated circuits and relates to a high-voltage ESD protection device, in particular to a high-voltage ESD protection device with a double anti-latch ring LDMOS-SCR structure, which can be used to improve the reliability of on-chip IC high-voltage ESD protection. Background technique [0002] With the widespread use of automotive electronics, handheld terminals, high-speed USB interfaces, and tablet electronics, consumer electronics are facing increasingly severe challenges to system reliability. Static electricity is a common physical phenomenon. With the rapid development of integrated circuits and the wide application of polymer materials in recent years, the damage caused by the force, discharge and induction of static electricity is very serious. According to the statistics of the relevant departments of the United States, the annual loss of the US electronics industry due to elec...

AI Technical Summary

Problems solved by technology

Aiming at the problem of weak latch-up resistance in the existing high-voltage ESD protection technology, this paper proposes a technical solution with high sustain voltage, high sustain current, low trigger voltage and strong robustness, which can enhance the on-chip power integrated circuit system reliability

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