High Electron Mobility Transistor Fabrication Method

Abstract

The invention discloses a manufacturing method for a high-electron mobility transistor. The method comprises the following steps: forming a first semiconductor layer on a substrate; forming a gate dielectric layer at the position of a gate on the first semiconductor layer; forming a second semiconductor layer in an area beyond the position of the gate on the first semiconductor layer to form a groove in the position of the gate; forming a source and a drain on the second semiconductor layer on the two sides of the groove; forming the gate on the gate dielectric layer. According to the method, the concentration of two-dimensional electron gas in a channel can be reduced, the forward threshold voltage of the high-electron mobility transistor can be increased, and the capability of a device in resisting noise interference can be enhanced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, and in particular to a method for manufacturing a high electron mobility transistor. Background technique [0002] As a third-generation semiconductor material, gallium nitride has the characteristics of large band gap, high breakdown voltage, high electron saturation mobility, small dielectric constant, strong radiation resistance and good chemical stability. , detection and high-temperature high-frequency circuits are widely used. The two-dimensional electron gas (2DEG) generated in the interface heterojunction of gallium nitride (GaN) and aluminum gallium nitride (AlGaN) has inherent advantages for the fabrication of high electron mobility transistors (HEMT). [0003] Currently, research on HEMTs with AlGaN / GaN heterojunctions is mainly focused on depletion-mode devices. The 2DEG naturally formed at the AlGaN / GaN heterojunction channel requires a negative gate voltage to deplete the 2...

AI Technical Summary

Problems solved by technology

In terms of device performance, there are mainly the following shortcomings: 1. The forward threshold voltage is generally not high. At present, only the application of metal-insulator-semiconductor (MIS, metal-insulator-semiconductor) structure can increase the forward threshold voltage to above 2V. ;2. Material loss is unavoidable. After under-gate grooving or plasma implantation technology, even after annealing, the performance of the device will still be affected; 3. The device size is large, and it is difficult to realize short-channel devices; 4. The stability of the device is not high, and it has not been effectively verified for use in a high temperature environment

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