Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of copper zinc tin sulfide/graphene oxide composite semiconductor photocatalyst

A graphene composite, copper-zinc-tin-sulfur technology, applied in the direction of physical/chemical process catalysts, chemical instruments and methods, chemical/physical processes, etc., can solve the problem of catalytic activity decline and achieve improved resistance to photodissolution and photocorrosion effect of ability

Inactive Publication Date: 2014-03-05
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF2 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to overcome the shortcoming and deficiency of above-mentioned prior art, provide the preparation method of copper-zinc-tin-sulfur / graphene oxide compound semiconductor photocatalyst, solve existing photocatalyst copper-zinc-tin-sulfur compound because photodissolution and photocorrosion effect cause Catalytic activity decline problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of copper zinc tin sulfide/graphene oxide composite semiconductor photocatalyst
  • Preparation method of copper zinc tin sulfide/graphene oxide composite semiconductor photocatalyst
  • Preparation method of copper zinc tin sulfide/graphene oxide composite semiconductor photocatalyst

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A preparation method of a copper-zinc-tin-sulfur compound includes the following steps:

[0031] (1) 0.4g copper acetate, 0.18g zinc acetate, 0.24g tin acetate, 0.30g thiourea and 0.012g graphene oxide were mixed and dispersed in 200ml ethylene glycol solution to form a precursor solution;

[0032] (2) Put the precursor solution into a hydrothermal reaction kettle for heating, react at a constant temperature of 200 degrees Celsius for 20 hours and then stop the reaction. After completion, a mixture of copper, zinc, tin and sulfur / graphene oxide composite compound and reaction solution will be obtained;

[0033] (3) After the above mixed liquid is naturally cooled, it is filtered under reduced pressure and dried in a vacuum for 20 hours at a temperature of 40°C during drying to obtain a copper zinc tin sulfur / graphene oxide composite compound semiconductor photocatalyst.

[0034] In this example, a test was conducted on the photocatalytic performance of copper, zinc, tin and sulf...

Embodiment 2

[0038] A preparation method of a copper-zinc-tin-sulfur compound includes the following steps:

[0039] (1) 0.4g copper nitrate, 0.18g zinc nitrate, 0.24g tin nitrate, 0.30g thiourea and 0.024g graphene oxide are mixed and dispersed in 50ml of aqueous solution to form a precursor solution;

[0040] (2) Put the precursor solution into a hydrothermal reaction kettle for heating, react at a constant temperature of 180 degrees Celsius for 24 hours and then stop the reaction. After completion, a mixture of copper, zinc, tin and sulfur / graphene oxide composite compound and reaction solution will be obtained;

[0041] (3) After the above mixed liquid is naturally cooled, it is filtered under reduced pressure and dried in a vacuum for 20 hours at a temperature of 40°C during drying to obtain a copper zinc tin sulfur / graphene oxide composite compound semiconductor photocatalyst.

[0042] Take 20 mg of the prepared copper-zinc-tin-sulfur / graphene oxide composite semiconductor photocatalyst and c...

Embodiment 3

[0044] A preparation method of a copper-zinc-tin-sulfur compound includes the following steps:

[0045] (1) 0.4g copper chloride, 0.18g zinc chloride, 0.24g tin chloride, 0.30g thiourea and 0.036g graphene oxide are uniformly mixed and dispersed in 50ml of aqueous solution to form a precursor solution;

[0046] 2) Put the precursor solution into the hydrothermal reactor for heating, and stop the reaction after a constant temperature reaction at 160 degrees Celsius for 28 hours. After completion, a mixed solution of the copper zinc tin sulfur / graphene oxide composite compound and the reaction solution will be obtained;

[0047] (3) After the above-mentioned mixed liquid is naturally cooled, it is filtered under reduced pressure and dried in a vacuum for 24 hours at a temperature of 50° C. to obtain a copper zinc tin sulfur / graphene oxide composite compound semiconductor photocatalyst.

[0048] Take 20 mg of the prepared copper-zinc-tin-sulfur / graphene oxide composite semiconductor photo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a preparation method of a copper zinc tin sulfide / graphene oxide composite semiconductor photocatalyst. The photocatalyst comprises copper zinc tin sulfide coated by graphene oxide. The preparation method comprises the following steps: step 1) uniformly mixing and dispersing 0.05%-0.2% of graphene oxide, 32%-34% of copper compound, 16%-18% of zinc compound, 21%-23% of tin compound and 26%-29% of sulfur compound in a carrying solution to form a precursor solution; step 2) enabling a reaction precursor to react at high temperature so as to prepare the copper zinc tin sulfide / graphene oxide composite semiconductor photocatalyst. The copper zinc tin sulfide / graphene oxide composite compound photocatalyst prepared by the preparation method disclosed by the invention improves the resistance to light dissolution and the resistance to light corrosion, and enables the photocatalyst to stably degrade organic pollutants in a water body for a long time.

Description

Technical field [0001] The invention relates to a copper-zinc-tin-sulfur / graphene oxide composite compound, in particular to a method for preparing a copper-zinc-tin-sulfur / graphene oxide composite semiconductor photocatalyst. Background technique [0002] Photocatalysts are reagents that can use light energy to carry out photocatalytic reactions. The most common photocatalyst is titanium dioxide photocatalyst. Due to the wide band gap, its application is limited to the range of ultraviolet light. It is often used in surface self-treatment, degradation of pollutants in the environment, etc. [0003] In recent years, researchers have devoted a lot of energy to exploring photocatalysts with good photocatalytic response in the visible light range to make full use of natural sunlight energy to improve the efficiency of photocatalysts. [0004] Existing copper, zinc, tin and sulfur compounds are used as photocatalysts to harmlessly degrade organic pollutants in environmental waters under...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B01J27/043C02F1/30C02F101/30C02F103/30
Inventor 周志华张平安林越来李玉兰李含冬巫江王志明
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com