semiconductor structure

Abstract

The invention relates to a semiconductor structure, which includes a gate, an oxide channel layer, a gate insulating layer, a source, a drain and a dielectric stack layer. The grid is configured on a substrate. The oxide channel layer and the gate are stacked on top of each other. The gate insulating layer is configured between the gate and the oxide channel layer. The source and the drain are disposed on one side of the oxide channel layer and parallel to each other. A portion of the oxide channel layer is exposed between the source and the drain. The dielectric stack layer is disposed on the substrate and includes multiple layers of first inorganic dielectric layers with a first refractive index and multiple layers of second inorganic dielectric layers with a second refractive index. The first and second inorganic dielectric layers are alternately stacked. At least one first inorganic dielectric layer directly covers portions of the source, the drain and the oxide channel layer. The first refractive index is smaller than the second refractive index.

Description

technical field [0001] The present invention relates to a semiconductor structure, and in particular to a semiconductor structure having an oxide channel layer. Background technique [0002] Taking the currently most popular liquid crystal display as an example, it is mainly composed of a thin film transistor array substrate, a color filter substrate, and a liquid crystal layer sandwiched between them. On the existing known thin film transistor array substrates, amorphous silicon (a-Si) thin film transistors or low temperature polysilicon thin film transistors are often used as switching elements of each sub-pixel. In recent years, studies have pointed out that oxide semiconductor thin film transistors have higher carrier mobility (mobility) than amorphous silicon thin film transistors, and oxide semiconductor thin film transistors have higher mobility than low-temperature polysilicon thin film transistors. It has the advantages of large-area and low-cost production. There...

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Problems solved by technology

[0004] The object of the present invention is to overcome the technical problems existing in the existing oxide semiconductor thin film transistors, and to provide a semiconductor structure that improves the penetration of the oxide channel layer by moisture and oxygen through the dielectric stack layer. Problems that affect the electrical properties and stability of the overall component, and can reflect short-wavelength light (such as ultraviolet light)

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