Preparation method of metastable-state vanadium dioxide thin film

Abstract

The invention discloses a preparation method of a metastable-state vanadium dioxide thin film by utilizing a direct-current magnetic sputtering technique. The preparation method comprises the following steps of (1) preparing a metal vanadium target, argon and oxygen, wherein a magnetic sputtering instrument at least comprises two vacuum cavities, namely a sample preparation cavity and a growth cavity, and the growth cavity is vacuumized to be below 4.5*10<-4>; (2) only introducing Ar, setting a sputtering powder, and cleaning oxidized parts and certain pollutant impurities off from the surface of the metal vanadium target; (3) heating a substrate, and maintaining the temperature for about 10 minutes; (4) introducing argon and oxygen, regulating the pressure intensity of the vacuum chamber to be 1 Pa, and starting a radio-frequency sputtering working source for sputtering with the powder of 40 W, wherein the ratio of argon to oxygen is 10:1; (5) after the thin film grows to the required thickness, closing a heating power supply, naturally cooling a sample, opening a vacuum valve in the process, and maintaining a molecular pump at an opening state. The thin film prepared by utilizing the preparation method has a good structure and good resistance-temperature coefficient.

Description

technical field [0001] The invention relates to a growth method of a metastable vanadium dioxide thin film material, belonging to the technical field of material preparation. Background technique [0002] Vanadium oxides have a variety of valence states, according to the valence state of vanadium from low to high, it is VO–V 2 o 3 –VO 2 –V 2 o 5 , studies have shown that at V 2 o 3 and VO 2 between V n o 2n-1 (3≤n≤9) mesophase, containing V 3+ and V 4+ ; while in VO 2 –V 2 o 5 between V n o 2n+1 (3≤n≤6) mesophase, containing V 4+ and V 5+ . Using the magnetron sputtering method, vanadium oxide can be grown, usually V 2 o 5 thin films, while growing epitaxial VO with a stoichiometric ratio 2 Thin films are quite challenging. [0003] Vanadium dioxide usually has three crystal phases under normal pressure: (1) metastable monoclinic rutile structure (B), denoted as VO 2 (B); (2) monoclinic rutile structure (M), denoted as VO 2 (M); (3) tetragonal structu...

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Problems solved by technology

[0004] The present invention targets VO with a stoichiometric ratio 2 Difficult film growth and poor quality technical problems provide a stable and reliable preparation process for growing VO 2 (B) Thin film material, which can be used as heat sensitive material for infrared detection

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