Low-temperature sintered microwave dielectric ceramic material, preparation method and microwave device
A technology of microwave dielectric ceramics and low-temperature sintering, applied in the field of microwave dielectric ceramics, can solve the problems of inability to obtain high-density ceramic diaphragms, increased loss, and reduced quality factor, and achieve low dielectric loss, low production costs, and quality The effect of high factor
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
preparation example Construction
[0031] The invention also discloses a method for preparing a low-temperature sintered microwave dielectric ceramic material, which includes the following steps:
[0032] a. Preparation (Ba (1-a) Sr a ) 5 (Nb (1-b) Sb b ) 4 o 15 ceramic powder;
[0033] b. Preparation of BaNb 2 o 6 ceramic powder;
[0034] c. preparing zinc boron glass powder;
[0035] d. Weighing (Ba (1-a) Sr a ) 5 (Nb (1-b) Sb b ) 4 o 15 Ceramic powder, BaNb 2 o 6 Ceramic powder and zinc-boron glass form a mixed powder.
[0036] Further, in step a, press (Ba (1-a) Sr a ) 5 (Nb (1-b) Sb b ) 4 o 15 The stoichiometric ratio weighs barium-containing compounds, strontium-containing compounds, niobium-containing compounds, and antimony-containing compounds and puts them into a ball mill jar and uses wet ball milling to mix ball mills. After drying in an oven, keep it at 900°C to 1200°C for 1 to 6 hours to obtain (Ba (1-a) Sr a ) 5 (Nb (1-b) Sb b ) 4 o 15 ceramic powder;
[0037] I...
Embodiment 1
[0053] Examples 1 to 5 (Example 1 is an unmodified comparative example) show that positive 2-valent strontium elements and positive 5-valent antimony elements with small radius are used to synergistically dope Ba 5 Nb 4 o 15 , can effectively adjust the microwave dielectric properties of the material. Especially the microwave property of the material of embodiment 3 is better, and dielectric constant ε r =37.1, the quality factor Q×f can reach 42600GHz, and the resonant frequency temperature coefficient τ f =51ppm / °C.
[0054] Embodiment six to embodiment eight show that BaNb 2 o 6 Ceramics can significantly adjust the resonant frequency temperature coefficient of the material, making the material suitable for applications where the temperature varies. Especially when BaNb 2 o 6 When the ceramic content is 0.1mol, i.e. embodiment 7, the resonant frequency temperature coefficient τ f =3ppm / °C.
Embodiment 14
[0056] In Example 14, the low-temperature co-fired microwave dielectric material with the most excellent comprehensive properties was obtained. That is, when a=0.02, b=0.05, x=0.1, z=5wt%, the dielectric constant ε r =35.5, the quality factor Q×f can reach 33600GHz, and the resonant frequency temperature coefficient τ f =1ppm / °C.
[0057] According to the parameter comparison of the above embodiments, the microwave dielectric material of the present invention has the advantages of moderate dielectric constant, high quality factor, and adjustable temperature coefficient of resonance frequency. Embodiments 3, 7 and 9 to 14 all obtain better microwave dielectric materials, especially Embodiment 14 has the best overall performance, quality factor Q×f>30000GHz, and resonant frequency temperature coefficient τ f Nearly zero, other embodiments are slightly insufficient compared with the fourteenth embodiment, but still meet the implementation process and requirements of the present...
PUM
Property | Measurement | Unit |
---|---|---|
melting point | aaaaa | aaaaa |
sintering temperature | aaaaa | aaaaa |
sintering temperature | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com