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Sapphire crystal growth furnace having three heaters

A sapphire crystal, three heater technology, applied in crystal growth, single crystal growth, single crystal growth and other directions, can solve the problems affecting the consistency of crystal growth and process stability, difficult to adjust, high labor costs and management costs, and achieve The effect of shortening production cycle, improving yield and reducing energy consumption

Active Publication Date: 2013-12-25
ZHEJIANG JINGSHENG MECHANICAL & ELECTRICAL
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  • Abstract
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AI Technical Summary

Problems solved by technology

Since the usual tungsten heater is in the form of a birdcage structure, using a birdcage heater, with the aging and deformation of the thermal field, its temperature distribution continues to change, which is difficult to adjust, so it is necessary to target the deformation of each thermal field The situation corrects the thermal field structure and crystal growth process, which affects the consistency of crystal growth and process stability, and requires engineers who are proficient in thermal field and process adjustment, and the labor and management costs are high.

Method used

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  • Sapphire crystal growth furnace having three heaters

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Embodiment Construction

[0016] Below in conjunction with accompanying drawing and specific embodiment the present invention is described in further detail:

[0017] figure 1 A sapphire crystal growth furnace with three heaters includes three heaters, namely an upper heater 1 , a middle heater 2 and a lower heater 3 . The upper heater 1 and the middle heater 2 are vertically installed on the furnace cylinder 4 top and the middle electrode 5 of the sapphire crystal growth furnace respectively, and the lower heater 3 is vertically installed on the furnace floor 6 electrode 5 of the sapphire crystal growth furnace, And the lower heater 3 can follow the furnace bottom plate 6 to move up and down, which is beneficial to the installation and disassembly of the crucible, and the design of the three heaters makes it possible to install space in the radial and axial directions, which is different from the original birdcage heater. In comparison, it is more conducive to the design of the furnace type with a la...

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Abstract

The present invention relates to the field of crystal growth furnaces, wherein a purpose of the present invention is to provide a sapphire crystal growth furnace having three heaters. The sapphire crystal growth furnace comprises three mesh heaters woven by using tungsten wires, wherein the three mesh heaters respectively are the upper portion heater, the middle portion heater and the lower portion heater, the upper portion heater and the middle portion heaters are respectively arranged on electrodes on the upper portion and the middle portion of the furnace cylinder of the sapphire crystal growth furnace, and the lower portion heater is arranged on an electrode on the furnace bottom plate of the sapphire crystal growth furnace. According to the present invention, based on different requirements on the thermal field temperature gradient at different crystal growth stages, powers of the three heaters are matched, such that the seeding process and the crystal growth process achieve the optimized temperature environment; and significant effects are provided crystal growth quality increase, production cycle shortening, yield increase, and energy consumption reduction.

Description

technical field [0001] The invention relates to the field of crystal growth furnaces, in particular to a sapphire crystal growth furnace with three heaters. Background technique [0002] Sapphire crystals are the basic raw materials for widely producing LEDs used in the optoelectronic industry. However, the drawing of sapphire furnace crystals needs to be carried out in a sapphire furnace, with the temperature raised to above 2050°, and then through seeding, shouldering, equal diameter, etc. , Finishing a series of operations to complete. Obtaining large-size, high-quality sapphire crystals requires a temperature environment suitable for sapphire crystal growth, which places very high requirements on the thermal field structure of the sapphire furnace. [0003] Generally, the sapphire furnace heats the tungsten heater inside through a single power cabinet using copper busbar soft connection and copper electrodes, thus forming a high temperature environment. Since the usual...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/14C30B29/20
Inventor 朱亮张俊曹建伟王巍沈兴潮
Owner ZHEJIANG JINGSHENG MECHANICAL & ELECTRICAL
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