MOCVD reactor and support shaft for MOCVD reactor

Abstract

The invention discloses an MOCVD (metal organic chemical vapor deposition) reactor and a support shaft for the MOCVD reactor. The problems that an inner ring heater is low in power utilization ratio, a load of the surface of the inner ring heater is high, and a cooling requirement below the support shaft is high due to the fact that the available support shaft is large in heat conductivity coefficient, and the heat transmission capacity of a slide glass disk to the support shaft is great are solved. The support shaft for the MOCVD reactor comprises a support shaft bottom, a support shaft middle and a support shaft top, wherein the support shaft top, the support shaft middle and the support shaft bottom are fixedly connected; gas channels are communicated among the support shaft bottom, the support shaft middle and the support shaft top; the support shaft top is frustum-shaped, and is provided with a connecting ring; a fixed cover plate is mounted at the top of the connecting ring; and a heat insulation cover plate is mounted at the top of the fixed cover plate. According to the MOCVD reactor and the support shaft, the service life of the inner ring heater is prolonged; the normal working time of equipment is prolonged; the complete power is reduced; and an energy-saving effect is improved.

Description

technical field [0001] The invention relates to a support shaft for an MOCVD reactor and the MOCVD reactor, in particular to a rotating support shaft and a wafer carrier for a metal organic chemical vapor deposition reactor. Background technique [0002] MOCVD (Metal Organic Chemical Vapor Deposition) equipment, that is, metal organic chemical vapor deposition equipment, which makes the metal organic source (MO source) containing group II or group III elements and the gas source containing group VI or group V elements under strict control React on the wafer under the conditions, and grow to obtain the required thin film material. [0003] The temperature field is one of the key parameters that need to be controlled in MOCVD, because the cracking efficiency of each material that participates in the reaction is different at different temperatures, and because the film formation reaction of MOCVD is very fast under high temperature conditions, the wafers on the carrier tray Di...

AI Technical Summary

Problems solved by technology

[0006] In order to overcome the shortcomings of the existing support shaft with high thermal conductivity and large heat transfer from the carrier plate to the support shaft, resulting in low power utilization of the inner ring heater, high surface load for inner ring heating, and high cooling requirements under the support shaft, The present invention aims to provide a support shaft and MOCVD reactor for MOCVD reactor, the support shaft and MOCVD reactor improve the service life of the inner ring heater, prolong the normal working time of the equipment, and reduce the power of the whole machine , which improves the energy-saving effect

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