Plasma etching device with even gas supply function and gas supply device thereof

Abstract

Provided is a plasma etching device with the even gas supply function. The plasma etching device with the even gas supply function comprises a reaction chamber, wherein a grounding electrode and a radio-frequency electrode are arranged in the reaction chamber in an opposite and spaced mode. The plasma etching device with the even gas supply function further comprises a gas supply device. The gas supply device comprises at least one even gas pipeline, wherein a gas inlet is formed in one end of the even gas pipeline, the other end of the even gas pipeline is closed, a plurality of gas outlets are formed in the side wall of the even gas pipeline, the gas inlet of the even gas pipeline is formed outside the reaction chamber, and is inserted into the reaction chamber in a sealed mode, the portion, with the gas outlets, of the even gas pipeline, namely a gas exhaust pipe portion, is arranged between the grounding electrode and the radio-frequency electrode, and the gas outlets face a workpiece which is placed between the grounding electrode and the radio-frequency electrode. The invention further provides the gas supply device. According to the plasma etching device with the even gas supply function and the gas supply device, uniformity of distribution of gas pressure of gas inside the reaction chamber can be well improved through the reaction chamber, the rejection rate of workpieces can be reduced, and the service life of the reaction chamber can be prolonged.

Description

technical field [0001] The invention relates to a plasma etching device, in particular to a plasma etching device capable of uniform gas supply; the invention also provides a gas supply device for plasma etching. Background technique [0002] In the processing of VLSI, active particles (chloride ions, fluorine ions, etc.) in the plasma are usually used to etch, oxidize, PECVD (plasma-assisted chemical vapor deposition) and other treatments on semiconductors (single crystal silicon) craft. [0003] attached figure 1 It is a structural diagram of the reaction chamber of a plasma semiconductor etching device commonly used in the prior art, and the reaction gas and auxiliary gas enter the reaction chamber through the air inlet hole on the upper end cover 1 and the ground electrode 2 with a vent hole , RF bias is connected to the RF electrode 3, the gas is excited to form plasma in the space between the ground electrode 2 and the RF electrode 3, and bombards the semiconductor ...

AI Technical Summary

Problems solved by technology

In order to ensure the uniformity of gas distribution in the reaction chamber as much as possible, there are usually many gas outlet holes on the gas distribution plate and the distribution range is large, which makes the corresponding gas path structure in the ground electrode connected with it on the gas path It becomes complicated, which leads to an increase in processing difficulty and an increase in cost

In addition, the air outlet holes on the gas distribution plate are usually evenly distributed, while the air inlet holes are usually located at the center of the upper end cover, and the directions of the air inlet holes and the air outlet holes are the same (both along the vertical direction). When the air inlet is blown in, it tends to be quickly discharged from the nearest or facing air outlet, which inevitably results in more reaction gas flowing through the air outlet closer to the center, and the closer to the air outlet. The less reactive gas flows through the gas outlet at the edge, the gas pressure caused by the gas entering the reaction chamber through the gas distribution plate is significantly higher at the center of the ground electrode than at its edge, which leads to plasma The active particle density is unevenly distributed along the radial direction of the workpiece, which affects the processing results of the workpiece

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