Infrared semiconductor laser active region, semiconductor laser and manufacturing method thereof

Abstract

The invention discloses an active area of an infrared semiconductor laser. The active area comprises a quantum well structure, wherein a potential well layer in the quantum well structure is made from InmGa1-mAs1-nBin; a potential barrier layer in the quantum well structure is made from InxGa1-xAs1-yBiy, m is equal to 0.48 to 0, n is equal to 0.04 to 0.34, x is equal to 0.48 to 0.54 and y is equal to 0.04 to 0. As InxGa1-xAs1-yBiy is adopted as the material of the active area of the semiconductor laser, based on lattice matching growth, the active area can be compatible with DBR, DFB, vertical-cavity surface-emitting lasers and other laser structures, and the laser adopting the Al-free structure improves the device performance and prolongs the device service life. The invention further provides a semiconductor laser and a manufacturing method thereof.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronics, in particular to an active region of an infrared semiconductor laser, a semiconductor laser including the active region and a manufacturing method thereof. Background technique [0002] Semiconductor lasers with a radiation wavelength greater than 2 μm are collectively referred to as mid- and far-infrared semiconductor lasers. They have growing prospects in high-resolution gas molecular spectrometers and are useful tools for measuring trace components in the air. In addition, in the mid-infrared band of 3-5 μm, the minimum loss of non-oxide waveguides, such as thallium bromide and chalcogenide stripping, can reach 10 -2 ~10 -5 dB / km, indicating that it is possible to open up a new field of extremely low-loss optical communication. Obviously, this type of laser must be a direct transition semiconductor with a narrow band. [0003] Although many quaternary system materials in the III...

AI Technical Summary

Problems solved by technology

In addition, the current traditional III-V semiconductor materials that are lattice-matched with binary crystals cannot be applied to the wavelength range greater than 4 μm

II-VI compound semiconductors have semiconductor materials that can emit wavelengths greater than 2 μm. HgCdTe has been widely studied and applied as an infrared detector material. However, only the stimulated emission of 3.8-4.1 μm and 3- Spontaneous emission at 15 μm, no reports of successfully developed laser diodes

Images