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Graphene pressure sensors

A technology of pressure sensor and graphene membrane, which is applied in the direction of measuring fluid pressure, instruments, measuring fluid pressure through electromagnetic components, etc.

Inactive Publication Date: 2013-10-30
IBM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, fabricating ultra-thin silicon membranes for use in pressure sensor devices is challenging due to the fragility of the material

Method used

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Embodiment Construction

[0021] The preferred embodiment of the present invention will now be described in more detail with respect to a semiconductor nano pressure sensor device constructed using a thin graphene film. E.g, Figure 1A , 1B Together with 1C, a semiconductor nano pressure sensor device 100 according to an aspect of the present invention is illustrated. specifically, Figure 1A Is a schematic top plan view of the semiconductor nano pressure sensor device 100, Figure 1B Is along Figure 1A A schematic side view of the semiconductor nano pressure sensor device 100 taken from line 1B-1B, and Figure 1C Is along Figure 1A A schematic side view of the semiconductor nano pressure sensor device 100 taken at line 1C-1C. Reference together Figure 1A , 1B And 1C, the nano pressure sensor device 100 roughly includes a bulk semiconductor substrate 105, an insulating layer 110, a cavity 115 formed in the insulating layer 110, a first graphene film 120 (supporting film), and a cavity 115 The second graph...

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Abstract

Semiconductor nano pressure sensor devices having graphene membrane suspended over open cavities formed in a semiconductor substrate. A suspended graphene membrane serves as an active electro-mechanical membrane for sensing pressure, which can be made very thin, from about one atomic layer to about 10 atomic layers in thickness, to improve the sensitivity and reliability of a semiconductor pressure sensor device.

Description

Technical field [0001] The field relates generally to semiconductor nanodevices for sensing pressure and, in particular, to semiconductor nanopressure sensor devices constructed using thin graphene films. Background technique [0002] Typically, semiconductor nano-pressure sensor devices are used to measure the pressure of, for example, gases or liquids, and are used in various control and real-time monitoring applications. Semiconductor nano-pressure sensor devices can also be used indirectly to measure other variables such as fluid flow, gas flow, velocity, water level and altitude. Commonly used pressure sensors implement strain gauge devices with an active membrane made of silicon (single crystal), polycrystalline silicon thin film, bonded metal foil, thick film or sputtered thin film, etc. Typically, the thinner the active membrane, the greater the membrane material deforms in response to external pressure, thereby providing greater sensitivity and accuracy. However, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/01G01L7/08
CPCH01L29/0649H01L27/0802G01L7/08H01L29/1606G01L9/0042G01L9/0051
Inventor 蔡劲吴燕庆朱文娟
Owner IBM CORP
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