Crystallization process of polycrystalline silicon and ingot casting process of polycrystalline silicon

A polycrystalline silicon ingot and polycrystalline silicon technology, which is applied in the field of solar cells, can solve the problems of unstable crystallization speed and poor crystallization stability of liquid silicon, and achieve the effects of stable crystallization speed, improved performance and high production efficiency.

Active Publication Date: 2015-06-24
YINGLI ENERGY CHINA
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Problems solved by technology

[0005] The present invention aims to provide a polysilicon crystallization process and a polysilicon ingot casting process to solve the problems of unstable crystallization speed and poor crystallization stability of liquid silicon in the prior art

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  • Crystallization process of polycrystalline silicon and ingot casting process of polycrystalline silicon
  • Crystallization process of polycrystalline silicon and ingot casting process of polycrystalline silicon
  • Crystallization process of polycrystalline silicon and ingot casting process of polycrystalline silicon

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Embodiment Construction

[0023] The embodiments of the present invention will be described in detail below with reference to the accompanying drawings, but the present invention can be implemented in many different ways defined and covered by the claims.

[0024] As a first aspect of the present invention, a polysilicon crystallization process is provided. The crystallization process includes: when the silicon material is in the state of coexistence of solid silicon and liquid silicon, maintain the temperature at the top of the ingot furnace to continue melting the solid silicon, and gradually reduce the temperature at the bottom of the ingot furnace to make the liquid silicon Recrystallization forms polysilicon ingots. The ratio range of solid silicon to liquid silicon is Since the liquid silicon is crystallized when the silicon material is in the state of a solid-liquid mixture, the temperature of the liquid silicon in each ingot furnace is basically the same, and the latent heat contained in the ...

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Abstract

The invention provides a crystallization process of polycrystalline silicon and an ingot casting process of polycrystalline silicon. The crystallization process comprises the following steps: when a silicon material is in the state of coexistence of solid silicon and liquid silicon, the temperature of the top of an ingot furnace is kept so as to continuously melt solid silicon, and the temperature of the top in the ingot furnace is gradually lowered to enable the liquid silicon to be subjected to recrystallization to form the polycrystalline silicon ingot. The crystallization treatment is performed to the liquid silicon, when the silicon material is in the state of mixing of solid and liquid, so the temperatures of liquid silicon in all the ingot furnaces are basically the same, latent heat of the liquid silicon is the same, and therefore the crystallization velocity of the liquid silicon is enabled to be stable, the crystallization stability of liquid silicon is improved, and the properties of solar cells manufactured by the polycrystalline silicon ingot is improved. Meanwhile, the crystallization process of the polycrystalline silicon has the characteristics of simple process and high production efficiency.

Description

technical field [0001] The invention relates to the technical field of solar cells, and more specifically, to a polycrystalline silicon crystallization process and a polycrystalline silicon ingot casting process. Background technique [0002] With the rapid development of the photovoltaic industry, polycrystalline silicon ingot furnaces have been widely used in the photovoltaic power generation industry due to their high production capacity and high quality stability of the products (polycrystalline silicon ingots and quasi-monocrystalline silicon ingots). [0003] The ingot casting process of polysilicon includes five process steps: heating, melting, crystallization (directional crystallization), annealing, and cooling. The high-purity polysilicon material is placed in the quartz crucible of the ingot furnace, and after the above-mentioned process steps, it is finally grown into a polysilicon ingot for the production of solar cells. [0004] When producing polycrystalline ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B28/06C30B29/06
Inventor 潘家明何广川陈艳涛
Owner YINGLI ENERGY CHINA
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