Equipment and method for growing silicon carbide film

Abstract

The invention discloses equipment and method for growing a silicon carbide film. The equipment is applicable to a chemical vapor deposition process and comprises a liquid source device, a carrier gas device, bypasses, a growth chamber and a vacuum system. The liquid source device comprises four source bottles, namely a silicon source bottle, a carbon source bottle, an N-type impurity source bottle and a P-type impurity source bottle, wherein the four source bottles are respectively mounted in independent constant-temperature tanks and are mounted in an inert gas control cabinet as a whole; and liquid sources are conveyed to the growth chamber by the source bottles through a carrier gas blistering method and are subjected to chemical reaction in the growth chamber so as to synthesize the silicon carbide film. Carrier gas is used for diluting and transporting a growth source and enters the growth chamber directly through a main pipeline. The bypasses can be opened or closed separately, so that gas sources of the growth chamber are controlled, and then, the growth of the film is controlled; and the gas transporting volume of the bypass connected with the carrier gas device is equivalent to the carrier gas volume of the main pipeline, so that the pressure of the growth chamber can not be affected during the switching of the bypasses connected with the liquid source device.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a chemical vapor deposition (Chemical Vapor Deposition, CVD) silicon carbide film growth equipment and a growth method thereof. Background technique [0002] Silicon carbide (SiC) is a third-generation semiconductor material with wide bandgap (3 times that of Si), high critical breakdown electric field (10 times that of Si), high thermal conductivity (3 times that of Si), and high carrier saturation Concentration (2 times of Si) and other characteristics, therefore, it has superior application value in high temperature, high frequency, high power power electronics and optoelectronic devices in military and aerospace fields, and is expected to gradually replace existing silicon-based high-power devices , to become the basic material for the next generation of power electronics semiconductors. [0003] SiC crystal materials are generally prepared by physical vapor transport...

AI Technical Summary

Problems solved by technology

On the other hand, for some unconventional silicon carbide films with special structures, such as emerging silicon carbide microstructure film materials with a thickness of 100-150 microns and multi-layer N-type and P-type doped structures, if the existing large-scale The growth of commercial devices appears to be too costly and difficult to deploy. It is urgent to develop new silicon carbide film growth devices and corresponding growth methods to grow these emerging silicon carbide microstructure films.

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