Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of gas sensitive sensor based on carbon nano tube-polypyrrole complex network structure

A gas sensor and carbon nanotube technology, applied in the field of nanosensors, can solve problems such as no research reports, and achieve a good combination effect

Inactive Publication Date: 2013-10-02
SUZHOU UNIV
View PDF4 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, looking at the current research, there are no related research reports

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of gas sensitive sensor based on carbon nano tube-polypyrrole complex network structure
  • Preparation method of gas sensitive sensor based on carbon nano tube-polypyrrole complex network structure
  • Preparation method of gas sensitive sensor based on carbon nano tube-polypyrrole complex network structure

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0044] ginseng figure 1 As shown, the present invention is based on the structural schematic diagram of the carbon nanotube-polypyrrole composite network structure gas sensor. The gas sensor can realize the response to DMMP molecules by detecting the resistance change when the composite network interacts with ammonia molecules. ginseng figure 2 Shown, the preparation method of this gas sensor comprises:

[0045] S1, performing hydrophilic treatment on the silicon substrate;

[0046] S2, performing amination treatment on the silicon substrate;

[0047] S3. Assembling the carbon nanotubes on the silicon substrate;

[0048] S4, adsorbing iron ions on the surface of the carbon nanotube network;

[0049] S5, depositing polypyrrole on the surface of the carbon nanotube network;

[0050] S6. Electrodes are prepared by micromachining.

[0051] The preparation method is specifically:

[0052] S1. Performing hydrophilic treatment on the silicon substrate. The silicon substrate is...

Embodiment 1

[0076] The preparation method described in this embodiment comprises the following steps:

[0077] 1. Put the silicon substrate in 40mL of a mixed solution of concentrated sulfuric acid and hydrogen peroxide (volume ratio: 3:1), treat at 80°C for 5 hours, take it out and wash it 4 times, and dry it with high-purity nitrogen to obtain a hydrophilic silicon substrate.

[0078] 2. Soak the hydrophilically treated silicon substrate in an aqueous solution of 2% 3-aminopropyltriethoxysilane for 12 hours, take it out and rinse it with water for 3 times, and dry it with high-purity nitrogen to realize silicon wafer Amination.

[0079] 3. Sonicate the carboxylated single-walled carbon nanotubes in water for 1 hour, and control the concentration to 1 mg / mL. After centrifugation at 12,000 g, place the aminated silicon substrate in the carboxylated single-walled carbon nanotubes aqueous solution and soak for 20 hours. , washed with deionized water three times, dried with nitrogen, and he...

Embodiment 2

[0084] The procedure is the same as that in Example 1, and the hydrophilic treatment time of the silicon wafer is changed from 5 hours to 1 hour, and the resistance of the prepared device is changed from 800Ω to 1500Ω.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
electrical resistanceaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method of a gas sensitive sensor based on a carbon nano tube-polypyrrole complex network structure. The preparation method comprises the following steps of: carrying out hydrophilic treatment on a silicon base; carrying out amination treatment on the silicon base; assembling a carbon nano tube on the silicon base; adsorbing iron ions on the surface of a carbon nano tube network; depositing polypyrrole on the surface of the carbon nano tube network; and micromachining to prepare an electrode. The gas sensitive sensor based on the carbon nano tube-polypyrrole complex network structure obtained by the preparation method disclosed by the invention realizes the purpose that an ammonia response performance is greatly improved; the preparation method is simple in process and is suitable for large-scale preparation of the sensors.

Description

technical field [0001] The invention relates to the technical field of nanometer sensors, in particular to a method for preparing a gas sensor based on a carbon nanotube-polypyrrole composite network structure. Background technique [0002] With the urgent needs of industrial production and environmental detection and the development of nanotechnology, nano gas sensors are playing an increasingly important role. Various nanomaterials, such as metal oxide semiconductor nanoparticles, carbon nanotubes, and two-dimensional nanofilms, can be used as sensitive materials to form nanoscale gas sensors. Among them, carbon nanotubes are all-carbon one-dimensional nanomaterials with unique properties, which have irreplaceable advantages for conventional sensors: 1) The huge interface provides a large number of gas channels, thereby greatly improving the sensitivity; 2) Significantly reduces the sensor work temperature; 3) The miniaturization of sensors can be realized, and the produc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/00
Inventor 王艳艳彭长四刘艳花霍大云张先营
Owner SUZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products