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Visible light-sensitive semiconductor composite photocatalytic material and preparation method thereof

A composite photocatalysis and visible light technology, applied in chemical instruments and methods, physical/chemical process catalysts, metal/metal oxide/metal hydroxide catalysts, etc., can solve the problem of easy recombination, confinement and quantum efficiency of photogenerated carriers Low-cost problems, to achieve the effect of abundant raw material sources, low preparation cost, and high catalytic activity

Inactive Publication Date: 2013-10-02
东莞上海大学纳米技术研究院 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But TiO 2 The application also faces many challenges. Its wide band gap results in the light absorption range limited to the ultraviolet region. In addition, the photogenerated carriers are easy to recombine and the quantum efficiency is low, which greatly limits its practical application.

Method used

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Embodiment 1

[0029] Embodiment 1: The visible light-sensitized semiconductor composite photocatalytic material provided in this embodiment is TiO with multilevel heterojunction structure 2 / Bi 2 WO 6 Composite crystals, made of the following molar ratio components: TiO 2 Nanocrystals 1-30: tungsten salt 1: bismuth salt 1.8-2.2.

[0030] The TiO 2 Nanocrystals include anatase type or brookite type or rutile type, or mixed crystal TiO with two or more phases 2 . The tungsten salt is one of tungsten-containing tungstate or chloride salt. The bismuth salt is one of bismuth-containing nitrate, acetate or chloride salt.

[0031] The visible light-sensitized semiconductor composite photocatalytic material is carried out in a reaction system solvent, and the reaction system solvent is composed of water and ethylene glycol in a volume ratio of (0-80):(80-0) mixed solution.

[0032] A preparation method of the above-mentioned visible light-sensitized semiconductor composite photocatalytic mat...

Embodiment 2

[0042] Embodiment 2: The visible light-sensitized semiconductor composite photocatalytic material and preparation method thereof provided in this embodiment, its components and steps are all the same as in Embodiment 1, the difference is:

[0043]The visible light-sensitized semiconductor composite photocatalytic material is made of the following molar ratio components: TiO 2 Nanocrystal 10: Tungsten salt 1: Bismuth salt 2.0.

[0044] The preparation method of the visible light-sensitized semiconductor composite photocatalytic material comprises the following steps:

[0045] (1) According to anatase and brookite mixed crystal TiO 2 Weigh anatase and brookite mixed crystal TiO with sodium tungstate in a molar ratio of 10:1 2 and sodium tungstate;

[0046] (2) Anatase and brookite mixed crystal TiO 2 Mix with sodium tungstate and disperse in 40mL water to form suspension A;

[0047] (3) Weigh bismuth nitrate according to the tungsten to bismuth molar ratio of 1:2 in step (1...

Embodiment 3

[0049] Embodiment 3: The visible light-sensitized semiconductor composite photocatalytic material and preparation method thereof provided in this embodiment, its components and steps are all the same as those in Embodiment 1 and 2, the difference is that:

[0050] The visible light-sensitized semiconductor composite photocatalytic material is made of the following molar ratio components: TiO 2 Nanocrystal 1: Tungsten salt 1: Bismuth salt 1.8.

[0051] The preparation method of the visible light-sensitized semiconductor composite photocatalytic material comprises the following steps: (1) according to anatase TiO 2 Weigh anatase TiO with tungsten hexachloride in a molar ratio of 1:1 2 and tungsten hexachloride;

[0052] (2) Anatase TiO 2 Mix with tungsten hexachloride and disperse in 40mL water to form suspension A;

[0053] (3) Weigh bismuth acetate according to the tungsten to bismuth molar ratio of 1:1.9 in step (1), and dissolve it in 40mL of ethylene glycol to form solu...

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Abstract

The invention discloses a visible light-sensitive semiconductor composite photocatalytic material. The visible light-sensitive semiconductor composite photocatalytic material is characterized in that the visible light-sensitive semiconductor composite photocatalytic material is a TiO2 / Bi2WO6 composite crystal material having a multistage heterojunction structure and is prepared from 1-30 parts by mole of TiO2 nanocrystals, 1 part by mole of a tungsten salt and 1.8 to 2.2 parts by mole of a bismuth salt. The invention also discloses a preparation method of the visible light-sensitive semiconductor composite photocatalytic material. The TiO2 / Bi2WO6 composite crystal material has the multistage heterojunction structure so that photon-generated carrier separation is promoted. Through optimization of composition and a ratio of a reaction solvent, a particle size of a Bi2WO6 phase in the composite system is controlled so that a nanoscale TiO2 / Bi2WO6 composite photocatalyst is obtained. The visible light-sensitive semiconductor composite photocatalytic material has good photocatalysis effects in visible-light photocatalysis of RhB.

Description

technical field [0001] The invention relates to the field of composite semiconductor photocatalytic materials, and specifically designs a design and preparation method of a visible light-sensitized semiconductor composite photocatalytic material with a multi-level heterogeneous structure. technical background: [0002] At present, with the increasingly serious environmental pollution and energy crisis, how to effectively deal with pollutants has aroused great concern of researchers. Among various treatment technologies, semiconductor photocatalysis can directly utilize sunlight to degrade and even mineralize pollutants. As the most widely used semiconductor photocatalytic material, TiO 2 It has the advantages of stable chemical performance and high catalytic efficiency. But TiO 2 There are many challenges in the application of it. Its wide bandgap width results in the light absorption range limited to the ultraviolet region. In addition, the photogenerated carriers are ea...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J23/31B01J35/02B01J35/00
Inventor 施利毅赵尹王舒洁袁帅王竹仪张美红
Owner 东莞上海大学纳米技术研究院
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