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A kind of sapphire crystal growth method and equipment

A technology of sapphire crystal and growth method, applied in the field of crystal growth, can solve the problem of difficult observation of sapphire single crystal, and achieve the effects of simplified post-processing procedures, improved material utilization rate and good repeatability

Inactive Publication Date: 2016-05-18
JIANGSU CEC ZHENHUA CRYSTAL TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] The technical problem to be solved by the present invention is: provide a kind of growth method of sapphire crystal, can solve the problem that the growing sapphire single crystal of crucible descending method is not easy to observe; Adopt the technical scheme provided by the present invention to know the crystallization rate of sapphire indirectly, thereby can Achieve precise control, which is conducive to improving the quality of sapphire

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  • A kind of sapphire crystal growth method and equipment
  • A kind of sapphire crystal growth method and equipment

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Embodiment 1

[0048] The invention discloses a sapphire crystal growth method, which is an improved method based on the crucible drop method crystal growth technology, and is a sapphire crystal growth method for forming shaped sapphire crystals by designing the crucible shape.

[0049] The present invention first discloses the improved sapphire crystal growth equipment used in the above growth method. The growth equipment includes a crucible 2, a liquid level sensor 1, a crystal growth furnace (not shown), and a heater (not shown).

[0050] see figure 1 , figure 1A schematic structural view of the crucible 2 and the liquid level sensor 1 is disclosed. The crucible 2 is arranged in the crystal growth furnace, and includes a crucible main body, a crucible upper mechanism arranged above the crucible main body, and an upper end opening of the crucible upper mechanism; the cross-sectional area s of the crucible upper mechanism is smaller than the cross-sectional area S of the crucible main bod...

Embodiment 2

[0060] The difference between the present embodiment and the first embodiment is that, in the present embodiment, the growth method of the sapphire crystal comprises the following steps:

[0061] [Step S1] Put the high-purity sapphire block or powder of the set weight into the crucible, select the oriented seed crystal in the direction of a or m and place it in the lower part of the crucible, cool the seed crystal, and then place the crucible in the crystal growth furnace The crucible used comprises a crucible main body, a crucible upper mechanism arranged above the crucible main body, and an upper end opening of the crucible upper mechanism; the cross-sectional area s of the crucible upper mechanism is less than the crucible main body cross-sectional area (referring to the section perpendicular to the axis of the crucible main body) S 1 / 100 of;

[0062] [Step S2] Vacuum the crystal growth furnace to a degree of vacuum of ~10 -3 Pa;

[0063] [Step S3] Use the heater to contr...

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Abstract

The invention discloses a growth method and a device for sapphire crystals. The device comprises a crystal growing furnace, a heater, a crucible, and a liquid level sensor. The heater is used to control the temperature of the crystal growing furnace. The crucible is arranged in the crystal growing furnace and comprises a crucible body and an upper crucible mechanism arranged on the upper portion of the crucible body. The upper crucible mechanism is provided with an opening on the upper end. The cross-sectional area of the upper crucible mechanism, s, is smaller than that of the crucible body, S. The liquid level sensor is arranged above the crucible to monitor the liquid level data of the upper crucible mechanism in real time, so that data of crystallization speed changes can be obtained to achieve accurate control. The growth method and device for sapphire crystals provided by the invention can control the rate of crystallization accurately, makes the production process repeatable, and ensures stable and high product quality.

Description

technical field [0001] The invention belongs to the technical field of crystal growth, and relates to a crystal growth method, in particular to a sapphire crystal growth method; meanwhile, the invention also relates to a sapphire crystal growth device. Background technique [0002] The composition of sapphire is aluminum oxide (Al 2 o 3 ), which is composed of three oxygen atoms and two aluminum atoms combined by covalent bonds, and its crystal structure is a hexagonal lattice structure. Because sapphire has the characteristics of high sound velocity, high temperature resistance, corrosion resistance, high hardness, high light transmission, and high melting point (2045°C), it is often used as a material for optoelectronic components. At present, the quality of ultra-high-brightness white / blue LEDs depends on the material quality of the GaN epitaxial layer (GaN), and the quality of the GaN epitaxial layer is closely related to the surface processing quality of the sapphire ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/20C30B11/00
Inventor 维塔利·塔塔琴科刘一凡帕维尔·斯万诺夫李东振王东海陈文渊朱枝勇牛沈军孙大伟
Owner JIANGSU CEC ZHENHUA CRYSTAL TECH
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