High-purity hollow silicon material, as well as polycrystalline silicon and ingot silicon vacuum solid-liquid separation method and equipment

A solid-liquid separation, polysilicon technology, applied in the direction of polycrystalline material growth, chemical instruments and methods, crystal growth, etc., can solve problems such as low yield, and achieve the effects of reasonable equipment structure, inhibition of reverse diffusion, and simple operation.

Inactive Publication Date: 2013-08-28
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The object of the present invention is to propose a vacuum solid-liquid separation method for polycrystalline silicon ingot silicon in order to solve the problem of low yield of the above polysilicon solid-liquid separation and purification method. While ensuring the separation of enriched impurity silicon liquid and high-purity ingot, It can also inhibit the reverse diffusion of enriched impurities, and at the same time, it is more convenient to remove the enriched impurity ingot obtained by directional solidification and purification, and improve the yield in polysilicon production

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  • High-purity hollow silicon material, as well as polycrystalline silicon and ingot silicon vacuum solid-liquid separation method and equipment

Examples

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Embodiment 1

[0038] This embodiment discloses a device capable of realizing the vacuum solid-liquid separation method of polycrystalline silicon ingot silicon, such as figure 1 As shown, the equipment includes a quartz crucible 4, a pressure rod 1, a vacuum device, a cooperating furnace cover 2 and a furnace body 3; after the furnace cover 2 and the furnace body 3 cooperate, a sealed operating system can be formed. The pipeline 15 communicates with the vacuuming equipment, and the vacuuming equipment is a mechanical pump 13 and a Roots pump 14 connected in series; the lower end of the furnace body 3 is provided with an ingot pulling device, and the quartz crucible 4 is fixed on the ingot pulling device near the inner side of the furnace body 3, The outside of the quartz crucible 4 is fixed with an induction coil 7 ; Moving the pressing rod 1 can realize the movement of the pressing rod 1 relative to the material in the quartz crucible 4 .

[0039] The outside of the quartz crucible 4 is a...

Embodiment 2

[0047] Using the same equipment as in Example 1 to carry out polysilicon ingot silicon vacuum solid-liquid separation, comprising the following steps:

[0048] The first step: smelting and pulling the ingot

[0049] In the quartz crucible 4, the silicon material that accounts for 93% of the volume of the quartz crucible is loaded, and the purity of the silicon material is 99.7%. Close the furnace cover 2 so that the inside of the furnace body 3 is in a sealed state, and utilize the mechanical pump 13 and the Roots pump 14 to move the furnace body 3 The interior is evacuated to 3Pa, the induction coil 7 is heated, the temperature inside the quartz crucible 4 is kept at 1000°C by means of a temperature control couple, and the furnace body 3 is filled with 6×10 helium gas with a purity of 99.9%. 4 Pa, again use the mechanical pump 13 and Roots pump 14 to vacuumize to 3Pa, and fill the furnace body 3 with helium 6×10 4 Pa, use the induction coil 7 to raise the temperature in th...

Embodiment 3

[0054] Using the same equipment as in Example 1 to carry out polysilicon ingot silicon vacuum solid-liquid separation, comprising the following steps:

[0055] The first step: smelting and pulling the ingot

[0056] In the quartz crucible 4, the silicon material that accounts for 95% of the volume of the quartz crucible is loaded, and the purity of the silicon material is 99.9%. Close the furnace cover 2 so that the inside of the furnace body 3 is in a sealed state, and utilize the mechanical pump 13 and the Roots pump 14 to move the furnace body 3. Vacuumize the interior to 7Pa, heat the induction coil 7, use the temperature control couple to keep the temperature in the quartz crucible 4 at 1200°C, and fill the furnace body 3 with argon gas 8×10 4 Pa, again use the mechanical pump 13 and Roots pump 14 to vacuumize to 7Pa, and fill the furnace body 3 with argon gas 8×10 4 Pa, use the induction coil 7 to raise the temperature in the quartz crucible 4 to 1650 ° C, and the mol...

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Abstract

The invention provides a high-purity hollow silicon material, as well as a polycrystalline silicon and ingot silicon vacuum solid-liquid separation method and equipment. The polycrystalline silicon and ingot silicon vacuum solid-liquid separation method comprises the following steps of: melting silicon in a container to form molten silicon; pulling ingots till the silicon crystal rate in the molten silicon reaches 80 to 90 percent, and vacuumizing so that a solidified shell is formed on the surface of the molten silicon; and perforating the shell by adopting a pressure lever during vacuumizing so that the molten silicon in the shell flows out of holes under the action of negative pressure to reach the surface of the shell, and stopping the pressure lever to perforate the shell after all the melt flows out, wherein the effluent molten silicon is solidified on the shell, thus realizing separation of enriched impure ingots and high-purity ingots. By adopting the method, back diffusion of enriched impurities can also be inhibited, meanwhile, the impurity enriched ingots obtained by directional solidification and purification can be conveniently removed, and the yield in polycrystalline silicon production is improved.

Description

technical field [0001] The invention relates to polysilicon purification technology, in particular to a high-purity hollow silicon material, polysilicon ingot silicon vacuum solid-liquid separation method and equipment. Background technique [0002] In recent years, solar-grade polysilicon raw materials have been in short supply with the rapid development of the photovoltaic industry, and people have turned their attention to the preparation of silicon raw materials. The preparation of polysilicon by metallurgical method is to directly prepare solar-grade polysilicon from a large amount of low-cost metallurgical-grade silicon as raw material, which has the characteristics of short production cycle, less pollution and low cost. The directional solidification technology in the metallurgical method can not only be used in the preparation of solar-grade polysilicon ingots, but also can be used to remove metal impurities with a small segregation coefficient in silicon, and has be...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/06C30B29/06C30B29/60
Inventor 姜大川任世强石爽谭毅邱介山
Owner DALIAN UNIV OF TECH
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