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A kind of triple-junction cascaded solar cell structure and its preparation method

A solar cell, three-junction technology, applied in the field of solar cells, can solve the problems of lack of substrate and reduced cell performance, and achieve the effect of simple growth process and high cell efficiency

Active Publication Date: 2017-02-01
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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Problems solved by technology

[0003] A material that can achieve this bandgap combination is AlInAs / InGaAsP / InGaAs, but the lattice constant of this material has a mismatch with the GaAs substrate by about 2.5%, and there is still a lack of substrates that match the lattice constants of the above materials
In order to obtain AlInAs / InGaAsP / InGaAs materials with 1.93eV / 1.39eV / 0.94eV band-gap combination, a common method is to grow a lattice-variation buffer layer on a GaAs substrate by using lattice-variation technology to achieve a constant lattice constant. However, this technology puts forward higher requirements for material growth, and the introduction of the buffer layer also brings more defects, which reduces the performance of the battery

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  • A kind of triple-junction cascaded solar cell structure and its preparation method

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Embodiment Construction

[0015] Hereinafter, specific embodiments of the present invention will be described in detail according to the accompanying drawings.

[0016] refer to figure 1 As shown, in the triple-junction cascaded solar cell of the present invention, the bottom, middle and top three cell layers are respectively GaAs 1-x-y N x Bi y , B m Ga 1-m As 1-n Bi n 、Al p Ga 1-p As material, the specific structure is: GaAs grown sequentially on the GaAs substrate 10 1-x-y N x Bi y Bottom cell layer 20, first tunnel junction 30, B m Ga 1-m As 1-n Bi n Intermediate cell layer 40, second tunnel junction 50Al p Ga 1-p As top battery layer 60 and GaAs contact layer 70; the bottom of the GaAs substrate and the top of the GaAs contact layer are also provided with ohmic electrodes.

[0017] The preparation method of the triple-junction cascaded solar cell of the present invention comprises the following steps:

[0018] (1)Growing GaAs 1-x-y N x Bi y bottom cell layer 20, wherein the Ga...

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Abstract

The present invention relates to the technical field of solar energy, especially a method for preparing a straight three-junction cascaded solar cell, comprising the following steps: sequentially growing a GaAs1-x-yNxBiy bottom cell layer and a first tunnel on a GaAs substrate by using an organic metal chemical vapor deposition method Junction, BmGa1-mAs1-nBin intermediate battery layer, second tunnel junction, AlpGa1-pAs top battery layer and GaAs contact layer; then make ohmic electrodes at the bottom of the GaAs substrate and the top of the GaAs contact layer. The present invention also provides the structure of such a solar cell. The invention realizes segmented absorption and utilization of solar spectrum, current matching between sub-batteries, and matching of each battery layer with GaAs lattice, which can obtain higher battery efficiency, and is a potentially ideal solar battery material.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a structure of a triple-junction cascaded solar cell and a manufacturing method thereof. Background technique [0002] In the field of III-V solar cells, multi-junction systems are usually used to achieve segmental absorption and utilization of the solar spectrum to obtain higher conversion efficiency. GaInP / GaAs / Ge triple-junction cells are currently the most researched and technically mature system. The battery has achieved the highest conversion efficiency of 32-33%. However, there is still a major problem in this system that the Ge battery covers a wider spectrum, and its short-circuit current can reach twice that of the other two-junction batteries. Due to the constraints of the three-junction batteries connected in series, the energy of the solar spectrum corresponding to the Ge battery is not captured. Full conversion utilization. Calculations show that the conversi...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0304H01L31/0725
CPCY02E10/50Y02P70/50
Inventor 李奎龙董建荣孙玉润曾徐路赵勇明于淑珍赵春雨杨辉
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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