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Three-junction cascaded solar cell and preparation method thereof

A solar cell, triple-junction technology, applied in the field of solar cells, can solve the problems of lack of substrate and lower battery performance

Active Publication Date: 2016-09-07
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] A material that can achieve this combination of gaps is AlInAs / InGaAsP / InGaAs, but the lattice constant of this material has a mismatch with the GaAs substrate by about 2.5%, and there is still no substrate that matches the lattice constant of the above materials.
In order to obtain AlInAs / InGaAsP / InGaAs materials with 1.93eV / 1.39eV / 0.94eV band-gap combination, a common method is to grow a lattice-variation buffer layer on a GaAs substrate by using lattice-variation technology to achieve a constant lattice constant. However, this technology puts forward higher requirements for material growth, and the introduction of the buffer layer also brings more defects, which reduces the performance of the battery

Method used

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  • Three-junction cascaded solar cell and preparation method thereof
  • Three-junction cascaded solar cell and preparation method thereof

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Embodiment 1

[0042] refer to figure 1 As shown, in the triple-junction cascaded solar cell structure of the present invention, the bottom, middle and top three cell layers are respectively GaAs 1-x-y N x Bi y 、In m Ga 1-m As 1-n N n 、Al p Ga 1-p Formed by As material, its forbidden band width is 0.94eV, 1.39eV, 1.93eV in turn.

[0043] The specific structure is: GaAs grown sequentially on the GaAs substrate 10 1-x-y N x Bi y Bottom cell layer 20, first tunnel junction 30, In m Ga 1-m As 1-n N n Intermediate cell layer 40, second tunnel junction 50, Al p Ga 1-p As top cell layer 60 and GaAs contact layer 70 . combine figure 2 As shown, the solar cell further includes an upper ohmic electrode 80 , an anti-reflection film 90 disposed on the GaAs contact layer 70 in sequence, and a bottom electrode 01 formed at the bottom of the GaAs substrate 10 . Among them, the epitaxial layers of the triple-junction cascaded solar cells of the present invention are all prepared by metal...

Embodiment 2

[0058] The structure of the triple-junction cascaded solar cell of the present invention is the same as that of Embodiment 1. refer to figure 1 and figure 2 As shown, its solar cell structure includes bottom, middle, and top three cell layers, which are respectively In x Ga 1-x As 1-y N y 、In m Ga 1-m As 1-n N n 、Al p Ga 1-p Formed by As material, its forbidden band width is 0.94eV, 1.39eV, 1.93eV in turn.

[0059] The specific structure is: In grown sequentially on the GaAs substrate 10 x Ga 1-x As 1-y N y Bottom cell layer 20, first tunnel junction 30, In m Ga 1-m As 1-n N n Intermediate cell layer 40, second tunnel junction 50, Al p Ga 1-p As top cell layer 60 and GaAs contact layer 70 . combine figure 2 As shown, the solar cell also includes an upper ohmic electrode 80 , an anti-reflective film 90 sequentially disposed on the GaAs contact layer 70 , and a bottom electrode 01 formed at the bottom of the GaAs substrate 10 . Among them, the epitaxial ...

Embodiment 3

[0074] The structure of the triple-junction cascaded solar cell of the present invention is the same as that of Embodiment 1. refer to figure 1 and figure 2 As shown, in the triple-junction cascaded solar cell structure of the present invention, the bottom, middle and top three cell layers are respectively GaAs 1-x-y N x Bi y , B m Ga 1-m-n In n As, Al p Ga 1-p As material, the specific structure is: GaAs sequentially grown on the GaAs substrate 10 1-x-y N x Bi y Bottom cell layer 20, first tunnel junction 30, B m Ga 1-m-n In n As intermediate battery layer 40, second tunnel junction 50, Al p Ga 1-p As top cell layer 60 and GaAs contact layer 70 . combine figure 2 As shown, the solar cell also includes an upper ohmic electrode 80 , an anti-reflective film 90 sequentially disposed on the GaAs contact layer 70 , and a bottom electrode 01 formed at the bottom of the GaAs substrate 10 . Among them, the epitaxial layers of the triple-junction cascaded solar cell...

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Abstract

The invention relates to the technical field of solar energy, in particular to some kinds of three-junction cascade solar cells. The three-junction cascade solar cell comprises a bottom cell layer, a first tunnel junction, a middle cell layer, a second tunnel junction, a top cell layer and a GaAs contact layer which sequentially grow on a GaAs substrate. The bottom of the GaAs substrate is provided with a lower ohmic electrode, and the top of the GaAs contact layer is also provided with an upper ohmic electrode and an anti-reflection film. The invention also provides the preparation method of the kinds of three-junction cascade solar cells. The three-junction cascade solar cell realizes segmented absorption use of the solar spectrum and the current matching among sub-cells, each cell layer is matched with GaAs crystal lattices, and the higher cell efficiency can be obtained. The three-junction cascade solar cell belongs to a potential ideal solar cell material.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to the structure of a triple-junction cascaded solar cell and a manufacturing method thereof. Background technique [0002] In the field of III-V solar cells, multi-junction systems are usually used to achieve segmental absorption and utilization of the solar spectrum to obtain higher conversion efficiency. GaInP / GaAs / Ge triple-junction cells are currently the most researched and technically mature system. The battery has achieved the highest conversion efficiency of 32-33%. However, there is still a major problem in this system that the Ge battery covers a wider spectrum, and its short-circuit current can reach twice that of the other two-junction batteries. Due to the constraints of the three-junction batteries connected in series, the energy of the solar spectrum corresponding to the Ge battery is not captured. Full conversion utilization. Calculations show that the conver...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0687H01L31/0693H01L31/18
CPCY02E10/544Y02P70/50
Inventor 于淑珍董建荣李奎龙孙玉润曾徐路赵勇明赵春雨杨辉
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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