Lightning protection circuit applicable to high-voltage environment

A lightning protection and high-voltage environment technology, which is applied in the direction of emergency protection circuit devices, emergency protection circuit devices, and circuit devices for limiting overcurrent/overvoltage, can solve problems such as complex structure of lightning protection circuits, and achieve good protection Lightning effect, easy to realize, simple circuit structure

Inactive Publication Date: 2013-08-14
CHENGDU HONGSHAN TECH
View PDF6 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the circuit structure of the lightning protection circuit used in the high-voltage environment is relatively complicated.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Lightning protection circuit applicable to high-voltage environment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0018] Such as figure 1 The shown lightning protection circuit suitable for high voltage environment includes P-type field effect transistor MOS1, P-type field effect transistor MOS2, N-type field effect transistor MOS3, N-type field effect transistor MOS4, Zener diode D1 and resistor R1; The source of the P-type field effect transistor MOS1 is connected to the gate and is connected to VDD at the same time; the source of the P-type field effect transistor MOS2 is connected to the gate and is connected to the gate of the P-type field effect transistor MOS1 at the same time On the drain; the drain of the N-type field effect transistor MOS3 is connected to the drain of the P-type field effect transistor MOS2, and the gate of the N-type field effect transistor MOS3 is connected to the source and is connected to the N-type field effect transistor MOS4 at the same time On the drain of the N-type field effect transistor MOS4; the gate of the N-type field effect transistor MOS4 is con...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a lightning protection circuit applicable to a high-voltage environment. The source electrode and the gate electrode of a P-type field-effect transistor MOS1 (Metal Oxide Semiconductor 1)are connected and are simultaneously connected with VDD; the source electrode and the gate electrode of a P-type field-effect transistor MOS2 are connected and are simultaneously connected with the drain electrode of the P-type field-effect transistor MOS1; the drain electrode of an N-type field-effect transistor MOS3 is connected with that of the P-type field-effect transistor MOS2; the gate electrode and the source electrode of the N-type field-effect transistor MOS3 are connected and are simultaneously connected with the drain electrode of an N-type field-effect transistor MOS4; the gate electrode and the source electrode of the N-type field-effect transistor MOS4 are connected and are simultaneously grounded; the positive electrode of a voltage stabilizing diode D1 is connected with the source electrode of the N-type field-effect transistor MOS4 and the VDD; and one end of a resistor R1 is connected with the drain electrode of the P-type field-effect transistor MOS2. The lightning protection circuit is applicable to the high-voltage environment and is simple in structure.

Description

technical field [0001] The invention relates to a lightning protection circuit, in particular to a lightning protection circuit suitable for high-voltage environments. Background technique [0002] In summer, the thunderstorm season, lightning often occurs. There are lightning protection circuits in all aspects, but most of them are used in low voltage environments. However, the circuit structure of the lightning protection circuit used in the high-voltage environment is relatively complicated. Contents of the invention [0003] The invention provides a lightning protection circuit suitable for a high-voltage environment, which can be applied to a high-voltage environment, and has a simple circuit structure. [0004] In order to solve the above-mentioned technical problems, the present invention adopts the following technical solutions: [0005] A lightning protection circuit suitable for high-voltage environments, which includes P-type field effect transistor MOS1,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H02H9/04
Inventor 黄友华
Owner CHENGDU HONGSHAN TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap