Growing method of GaN-based light-emitting diode extensional structure
A technology of light-emitting diodes and epitaxial structures, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems affecting the brightness of epitaxial wafers, affecting the antistatic ability, etc., to improve surface morphology, reduce V-shaped defects, improve Effect of Crystal Quality
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[0023] The embodiments of the present invention are described in detail below: the present embodiment is implemented under the premise of the technical solution of the present invention, and detailed implementation and specific operation process are provided, but the protection scope of the present invention is not limited to the following implementation example.
[0024] like figure 1 The LED epitaxial structure shown includes, from bottom to top, substrate 1, low-temperature GaN buffer layer 2, GaN undoped layer 3, N-type GaN layer 4, shallow quantum well layer 5, light-emitting quantum well layer 6, A low-temperature P-type GaN layer 7 , a PAIGaN current blocking layer 8 , a high-temperature P-type GaN layer 9 , and a P-type contact layer 10 .
[0025] The method for growing the above-mentioned LED epitaxial structure includes the following specific steps:
[0026] Step 1: Clean the substrate 1 at a high temperature for 5-20 minutes in a hydrogen atmosphere at 1000-1200°C...
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