Dehydration treatment method for indium antimonide infrared detector

A technology of an infrared detector and a processing method, which is applied in the field of communication, can solve the problems of poor consistency of indium antimonide infrared detectors, and achieves the effects of avoiding large fluctuations, avoiding secondary pollution, and stabilizing consistency.

Active Publication Date: 2013-07-24
11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the above analysis, the present invention aims to provide a dehydration treatment method for indium antimonide infrared detectors to solve the problem of poor consistency of indium antimonide infrared detectors prepared in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Dehydration treatment method for indium antimonide infrared detector

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] An embodiment of the present invention provides a method for dehydrating an indium antimonide infrared detector, see figure 1 , the method includes:

[0031] S101, cleaning the indium antimonide infrared detector after the table top is corroded;

[0032] Wherein, the cleaning treatment cleaning treatment specifically includes:

[0033] The indium antimonide infrared detector is cleaned with deionized water with a resistivity greater than 12 MΩ, and the flushing time is 30-60 minutes, so as to completely remove remaining impurities on the indium antimonide infrared detector.

[0034] S102. Submerge the cleaned indium antimonide infrared detector in a methanol solution for dehydration treatment for 1-3 minutes, and repeat this process three times to fully remove the remaining indium antimonide infrared detector The water is removed, thereby effectively controlling the large fluctuations in chip performance caused by changes in the humidity of the purification room, and ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a dehydration treatment method for an indium antimonide infrared detector. The dehydration treatment method comprises the following steps of: pretreating the indium antimonide infrared detector of which the tabletop is corroded; placing the pretreated indium antimonide infrared detector into methanol for dehydration treatment; and placing the indium antimonide infrared detector subjected to dehydration treatment into ozonation equipment for sequentially carrying out drying treatment and ozonation treatment. Impurities and water resided on the indium antimonide infrared detector are thoroughly removed by sequentially cleaning and dehydrating the indium antimonide infrared detector, so the wild fluctuation of performances of the indium antimonide infrared detector along with the humidity change of a purifying room is avoided and the consistency of parts within batches and parts between batches of the performances of a chip is basically stabilized; and the dehydration treatment effect is maintained in the purifying room environment with high humidity by the drying treatment and the ozonation treatment, and thus secondary pollution to the chip due to water vapor is avoided.

Description

technical field [0001] The invention relates to the technical field of communication, in particular to a method for dehydrating an indium antimonide infrared detector. Background technique [0002] Indium antimonide is an important material for mid-wave infrared detection devices. After decades of development, the chip structure has evolved from unit and multi-component to one-dimensional line array and two-dimensional area focal plane array. At present, the research on medium-wave high-resolution InSb infrared focal plane detectors has entered the application stage, and a large number of InSb infrared focal plane detectors of various specifications have been equipped in various systems. [0003] In the preparation process of infrared detectors based on indium antimonide materials, the chip treatment before passivation is a very important process step, which directly affects the performance of the detector chip. Currently, the indium antimonide detector material is mainly d...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 亢喆邱国臣肖钰
Owner 11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap